BDX53C NPN Darlington Transistor TO-220
EGP 10
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Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application Audio amplifiers Linear and switching industrial equipment Specifications Product Attribute Attribute Value Product Category: Darlington Transistors Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum DC Collector Current: 8 A Maximum Collector Cut-off Current: 200 uA Pd – Power Dissipation: 60 W Mounting Style: Through Hole Package / Case: TO-220-3 Maximum Operating Temperature: + 150 C Continuous Collector Current: 8 A DC Collector/Base Gain hfe Min: 750 BDX53C Datasheet
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