RM11B Diode

Description

RM11B Diode A high-voltage, general-purpose silicon rectifier diode in an axial, through-hole package. Rated for 800 V reverse voltage and 1.2 A average current, it features low forward drop and standard recovery times, making it ideal for commercial-frequency rectification and reverse-polarity protection. It is lead-free and RoHS compliant. Features Rated V RRM 800 V and average forward current I F(AV) 1.2 A. Low forward voltage typical V F = 0.92 V @ 1.5 A for efficient performance. Standard recovery speed (>500 ns at ≥200 mA). Low reverse leakage I R = 10 µA at 800 V. Corrosion-resistant, axial metal-lead construction. Specifications Parameter Value Model RM11B Reverse Voltage (V RRM ) 800 V Average Forward Current (I F(AV) ) 1.2 A Forward Voltage (V F @ I F ) 0.92 V @ 1.5 A Reverse Leakage Current (I R ) 10 µA @ 800 V Recovery Time 500 ns @ ≥ 200 mA Package Type Axial through-hole Operating Temperature Range –40 °C to +150 °C Applications Commercial-frequency rectifier circuits. Reverse-polarity protection in power supplies. General-purpose power rectification. Battery charger and adapter designs. Industrial equipment requiring dependable power handling. Package Contents 1x RM11B Diode. Datasheet RM11B Diode.

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