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L702B 2A QUAD NPN Darlington Transistor DIP-16
L702B

L702B 2A QUAD NPN Darlington Transistor DIP-16

In stockTransistors & MOSFETsVerified 2 weeks ago

EGP 95

Makers Electronics

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Description

L702B 2A QUAD NPN Darlington Transistor DIP-16 The L702B is a versatile and robust quad NPN Darlington transistor array housed in a DIP-16 package. This monolithic integrated circuit is engineered for high-current and high-voltage switching applications, making it an ideal component for a wide range of electronics projects. By integrating four Darlington pairs into a single package, the L702B simplifies circuit design, reduces component count, and lowers overall costs. Features High Sustaining Voltage High Output Current High Current Gain Wide Operating Temperature Range Specifications Parameter Symbol Value Unit Absolute Maximum Ratings Collector-emitter Voltage (input open) VCEX 90 V Input Voltage Vi 30 V Collector Current Ic 3 A Total Power Dissipation (Powerdip, Tpin 9 to 16 ≤ 90 °C) Ptot 4 W Total Power Dissipation (Powerdip, Tamb ≤ 70 °C) Ptot 1.1 W Total Power Dissipation (Multiwatt, Tcase ≤ 90 °C) Ptot 20 W Operating Junction Temperature Tj -25 to 150 °C Storage Temperature Tstg -55 to 150 °C Electrical Characteristics (Tcase = 25°C) Collector Emitter Sustaining Voltage (Ic = 100 mA) VCE(sust) 70 (Min) V Collector Emitter Saturation Voltage (Ic = 1.25 A, Ii = 2 mA) VCE(sat) 1.9 (Max) V DC Forward Current Gain (Ic = 1 A, VCE = 3 V) hFE 1000 (Min) – Input Voltage (On Condition, Ic ≥ 1 A) Vi 2.4 (Min) V Input Voltage (Off Condition, Ic ≤ 0.1 mA) Vi 0.4 (Max) V Thermal Data (Powerdip Package) Thermal Resistance Junction-Ambient Rth j-amb 70 (Max) °C/W Thermal Resistance Junction-Pins (9 to 16) Rth j-pins 14 (Max) °C/W Applications Driving Solenoids and Relays Motor Control Displays Power Amplifiers Switching Circuits DataSheet L702

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