FQP90N03 MOSFET Transistor

Description

FQP90N03 MOSFET Transistor The FQP90N03 MOSFET Transistor is a high‑performance N‑channel power field‑effect transistor in a TO‑220 package designed for robust switching and load‑handling in modern electronics applications. The device supports a 30 V drain‑source voltage rating with continuous drain currents up to 90 A, making it suitable for intensive power circuits where efficient switching and high current throughput are required. These characteristics make the FQP90N03 an excellent choice for designers and engineers working on power supplies, motor drivers, DC‑DC converters, or other high‑current switching applications. Features: N‑channel power MOSFET in TO‑220 package. 30 V drain‑source voltage rating for low‑voltage power applications. Continuous drain current capability up to 90 A. Very low on‑resistance for efficient conduction. Suitable for high‑current switching and load control. Easy to mount with heatsink for enhanced thermal management. Fast switching characteristics. Specifications: Parameter Value Drain-Source Voltage 30V Gate-Source Voltage ±20V Continuous Drain Current 90A Pulsed Drain Current 90A Power Dissipation 250W RDS(on) at VGS=10V 0.0029Ω RDS(on) at VGS=4.5V 0.0033Ω Gate Threshold Voltage 1.5-2.5V Total Gate Charge 82nC Input Capacitance 12065pF Output Capacitance 1725pF Reverse Transfer Capacitance 970pF Operating Temperature -55to+175°C Package TO-220 PIN Configuration: Pin 1 (G) : Gate. Pin 2 (D) : Drain Pin 3 (S) : Source Applications: DC‑DC converters and power management circuits. Motor drivers and brushless DC motor control. High‑current switching regulators. Battery charge/discharge control systems. Automotive power electronics. Industrial power control and automation systems. Package Include: 1x FQP90N03 MOSFET Transistor (TO‑220). Datasheet: 90N03

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