BC558 Bipolar Junction Transistors – BJT PNP 30V 100mA
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BC558 Bipolar Junction Transistors – BJT PNP 30V 100mA The BC558 is a PNP epitaxial-silicon bipolar junction transistor designed for general-purpose switching and amplifier applications. It supports up to –30 V across the collector‑emitter junction and a continuous collector current of –100 mA, making it well suited for low‑to‑medium power audio and signal‑processing circuits. Features PNP Epitaxial Silicon Construction Collector–Emitter Voltage (V CEO ) = –30 V Collector Current (I C ) = –100 mA Power Dissipation (P C ) = 500 mW Low Saturation Voltages for Efficient Switching DC Current Gain (h FE ) from 110 to 800 Bandwidth (f T ) = 150 MHz Complement to BC546–BC550 (NPN Series) Specifications Parameter Symbol Value Unit Notes Collector–Emitter Voltage V CEO –30 V Absolute Max Collector–Base Voltage V CBO –30 V Absolute Max Emitter–Base Voltage V EBO –5 V Absolute Max Collector Current (DC) I C –100 mA Collector Power Dissipation P C 500 mW TA = 25 °C Junction Temperature T J 150 °C Max Operating Temp Storage Temperature T STG –65 to +150 °C DC Current Gain h FE 110 to 800 — V CE =–5 V, I C =–2 mA Collector–Emitter Saturation Voltage V CE(sat) –90 to –300 mV I C =–10 mA Base–Emitter On Voltage V BE(on) –600 to –750 mV I C =–2 mA Transition Frequency f T 150 MHz V CE =–5 V, I C =–10 mA Output Capacitance C ob 6 pF V CB =–10 V Noise Figure NF 2 to 10 dB V CE =–5 V, I C =–200 µA BC558 as switch BC558 as Amplifier Applications Audio Frequency Preamplifiers: Ideal for low-noise input stages in microphones and audio devices. General-Purpose Switching: Suitable for driving relays, small motors, and other switching tasks. Signal Processing: Used in differential amplifier circuits and low-level analog signal manipulation. Complementary Amplifier Designs: Works well with NPN transistors like BC548 to create push-pull amplifier stages. Hobby Electronics Projects: Common in DIY circuits, educational kits, and basic analog electronics. DataSheet BC558 Datasheet
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