IRFB52N15D MOSFET Transistor 150V 60A 320W TO-220
EGP 35
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IRFB52N15D MOSFET Transistor 150V 60A 320W TO-220 The IRFB52N15D is a high-performance N-Channel Power MOSFET designed for high-frequency DC-DC converters and other applications requiring fast and efficient power switching. Housed in a robust TO-220 package, this transistor offers a low on-resistance and is 100% avalanche tested to ensure reliable and robust operation. Features Low On-Resistance (RDS(on)) Enhancement Mode Fast Switching Speed 100% Avalanche Tested Robust Device Performance Low Gate-to-Drain Charge Fully Characterized Capacitance and Avalanche Voltage Specifications Parameter Value Unit Drain-Source Voltage (V DSS ) 150 V Continuous Drain Current (I D ) at T C = 25°C 60 A Pulsed Drain Current (I DM ) 240 A Gate-Source Voltage (V GS ) ±30 V Drain-Source On-Resistance (R DS(on) ) max 32 mΩ Total Power Dissipation (P D ) at T C = 25°C 320 W Operating Junction Temperature (T J ) -55 to +175 °C Gate Threshold Voltage (V GS(th) ) 3 (min) – 5 (max) V Channel-to-Case Thermal Resistance (Rth(ch-c)) 0.47 °C/W Package TO-220 – Applications High-Frequency DC-DC Converters Switching Power Supplies Motor Drives Power Amplifiers Load Switches Networking Applications DataSheet IRFB52N15D
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