Toshiba K2362 N-Channel Power MOSFET 500V 10A TO-3PN

Description

Toshiba K2362 N-Channel Power MOSFET 500V 10A TO-3PN The K2362 is an N-channel power MOSFET designed for high-voltage switching applications . It features a 500 V drain-to-source voltage rating , ±10 A DC drain-current rating , ±30 V gate-to-source voltage rating , and low drain-to-source on-resistance of 1.0 Ω maximum at VGS = 10 V and ID = 5.0 A . The device also provides low input capacitance (Ciss = 1050 pF typical) and high avalanche capability ratings . The datasheet specifies a 100 W total power dissipation at Tc = 25 °C , with an MP-88 package and a 3-terminal electrical connection of Gate, Drain and Source ; the package fin is connected to the Drain. Features N-channel power MOSFET Designed for high-voltage switching applications Drain-to-source voltage: 500 V Low on-resistance: 1.0 Ω maximum at VGS = 10 V, ID = 5.0 A Low input capacitance: Ciss = 1050 pF typical High avalanche capability ratings Gate-to-source voltage rating: ±30 V DC drain current rating: ±10 A Pulsed drain current rating: ±40 A Total power dissipation: 100 W at Tc = 25 °C Single avalanche current: 10 A Single avalanche energy: 142 mJ Specifications Specification Value Test Condition / Note Part Number K2362 Device Type N-Channel Power MOS FET Power MOS FET Application Type High-Voltage Switching Industrial use Package MP-88 Dimensions in millimeters Drain-to-Source Voltage (VDSS) 500 V Absolute maximum rating for K2362 Gate-to-Source Voltage (VGSS) ±30 V Absolute maximum rating Drain Current, DC (ID) ±10 A Absolute maximum rating Drain Current, Pulse ±40 A PW ≤ 10 µs, Duty Cycle ≤ 1% Total Power Dissipation (PT1) 100 W Tc = 25 °C Total Power Dissipation (PT2) 3.0 W Ta = 25 °C Channel Temperature (Tch) 150 °C Maximum Storage Temperature (Tstg) -55 to +150 °C Maximum rating Drain-to-Source On-Resistance (RDS(on)) 0.8 Ω min / 1.0 Ω max VGS = 10 V, ID = 5.0 A Gate-to-Source Cutoff Voltage (VGS(off)) 2.5 to 3.5 V VDS = 10 V, ID = 1 mA Forward Transfer Admittance (|yfs|) 3.0 S min VDS = 10 V, ID = 5.0 A Drain Leakage Current (IDSS) 100 µA max VDS = VDSS, VGS = 0 Gate-to-Source Leakage Current (IGSS) ±100 nA max VGS = ±30 V, VDS = 0 Input Capacitance (Ciss) 1050 pF typ. VDS = 10 V Output Capacitance (Coss) 200 pF typ. VGS = 0, f = 1 MHz Reverse Transfer Capacitance (Crss) 26 pF typ. VGS = 0, f = 1 MHz Turn-On Delay Time (td(on)) 15 ns typ. VGS = 10 V, VDD = 150 V, RG = 10 Ω, RL = 30 Ω Rise Time (tr) 24 ns typ. VGS = 10 V, VDD = 150 V, RG = 10 Ω, RL = 30 Ω Turn-Off Delay Time (td(off)) 50 ns typ. VGS = 10 V, VDD = 150 V, RG = 10 Ω, RL = 30 Ω Fall Time (tf) 14 ns typ. VGS = 10 V, VDD = 150 V, RG = 10 Ω, RL = 30 Ω Total Gate Charge (QG) 26 nC typ. ID = 10 A, VDD = 400 V, VGS = 10 V Gate-to-Source Charge (QGS) 6.1 nC typ. ID = 10 A, VDD = 400 V, VGS = 10 V Gate-to-Drain Charge (QGD) 12 nC typ. ID = 10 A, VDD = 400 V, VGS = 10 V Body Diode Forward Voltage (VF) 1.0 V typ. IF = 10 A, VGS = 0 Reverse Recovery Time (trr) 350 ns typ. IF = 10 A, VGS = 0 Reverse Recovery Charge (Qrr) 2.0 µC typ. di/dt = 50 A/µs, VGS = 0 Single Avalanche Current (IAS) 10 A Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V Single Avalanche Energy (EAS) 142 mJ Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V Applications High-voltage switching Industrial-use switching applications Package Content 1 x Toshiba K2362 N-Channel Power MOSFET 500V 10A TO-3PN DataSheet 2SK2361

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