This listing was withdrawn
The supplier no longer lists it. Other suppliers may still have it.
See other suppliers
K2362
K2362 500V, 10A, 100W N-Channel Power MOSFET Transistor TO-3PN
EGP 30
Description
Specifications: Type Designator: 2SK2362 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 100 W Maximum Drain-Source Voltage |Vds|: 500 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Drain Current |Id|: 10 A Maximum Junction Temperature (Tj): 150 °C Rise Time (tr): 24 nS Drain-Source Capacitance (Cd): 200 pF Maximum Drain-Source On-State Resistance (Rds): 1 Ohm 2SK2362 Datasheet
From the supplier's page.