FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

Description

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F) The FQPF2N60 N-Channel Enhancement Mode Power MOSFET is a high-voltage switching transistor designed for applications that require up to 600V drain-source capability with a continuous drain current of 1.6A . It is well-suited for high-voltage control and switching stages where stable operation, compact design, and predictable switching behavior are important. With a relatively low gate charge (Qg) , the FQPF2N60 can be driven efficiently in many switching circuits, helping reduce driver requirements and supporting faster transitions. Its TO-220F insulated package also provides safer mounting and improved isolation from the heatsink, which is useful in compact power designs and consumer electronics assemblies. Key Features High voltage rating: up to 600V (VDS) Continuous drain current: up to 1.6A (ID) Low total gate charge: around 9 nC Fast switching capability (typical rise time in tens of nanoseconds) Insulated TO-220F package for easier and safer heatsink mounting Suitable for high-voltage switching and control circuits Absolute Maximum Ratings Parameter Value Drain-Source Voltage (VDS) 600 V Gate-Source Voltage (VGS) 30 V Drain Current (ID) 1.6 A Max Power Dissipation (PD) 28 W Max Junction Temperature (TJ) 150 °C Electrical Characteristics Parameter Value Gate Threshold Voltage (VGS(th)) up to 5 V Total Gate Charge (Qg) 9 nC Rise Time (tr) 25 ns Output Capacitance (Coss) 40 pF RDS(on) up to 4.7 Ω Package TO-220F (insulated full-pack) Typical Applications High-voltage switching stages SMPS auxiliary power sections Inverter / converter control circuits LED drivers and small HV power supplies Industrial and consumer high-voltage switching

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