Power IGBT Transistor G80N60 TO-247 600V 80A
EGP 120
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Power IGBT Transistor G80N60 TO-247 600V 80A The Power IGBT Transistor G80N60 TO-247 600V 80A is a high-performance ultrafast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient switching and high current handling , this device combines a 600 V blocking voltage with an 80 A continuous collector current capability. The TO-247 package facilitates easy integration into various power electronic systems. Features: High-Speed Switching: Enables rapid operation with minimal energy loss. Low Saturation Voltage: VCE(sat) of 2.1V at 40A collector current. High Input Impedance: Simplifies drive requirements. Integrated Fast Recovery Diode: Reverse recovery time (trr) of 50ns. Specifications: Collector-Emitter Breakdown Voltage (VCE(sus)): 600V. Gate-Emitter Threshold Voltage (VGE(th)): 6V. Maximum Collector Current (IC): 80A at 25°C. Maximum Gate-Emitter Voltage (VGE): ±20V. Thermal Resistance Junction-to-Case (RθJC): 0.5°C/W. Operating Junction Temperature (TJ): -55°C to +150°C. Pin Configuration: Applications: AC and DC motor controls. General-purpose inverters. Robotics and servo controls. Data Sheet: G80N60
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