SS8050 Y1 BJT SMD NPN Transistor 25V 1.5A 300mW SOT-23

Description

SS8050 Y1 BJT SMD NPN Transistor 25V 1.5A 300mW SOT-23 The SS8050 Y1 BJT SMD NPN Transistor is a general-purpose bipolar junction transistor designed for switching, amplification, driver, and control applications. It provides a collector-emitter voltage rating of 25V and a continuous collector current rating of 1.5A, making it suitable for electronic circuits requiring a compact NPN transistor with moderate current-handling capability. Features: NPN bipolar junction transistor. SS8050 transistor type. Y1 marking. 25V collector-emitter voltage rating. 1.5A continuous collector current. 300mW collector power dissipation. Specifications: Parameter Value Component Type NPN Bipolar Junction Transistor Transistor Type NPN Model Number SS8050 Y1 Collector-Emitter Voltage VCEO 25V Collector-Base Voltage VCBO 40V Collector Current IC 1.5A Power Dissipation PC 300mW DC Current Gain hFE 400 maximum at 100mA Collector-Emitter Saturation Voltage VCE(sat) 500mV maximum at 800mA Emitter-Base Voltage VEBO 5V Transition Frequency fT 100MHz Collector Cutoff Current ICBO 100nA maximum Package SOT-23 Number of Transistors 1 NPN Junction Temperature 150℃ Operating Temperature -55℃ to +150℃ Mounting Type Surface Mount Foot print: Applications: General-purpose transistor switching. Low-power switching circuits. Signal amplification. Audio-frequency driver stages. Transistor driver circuits. Signal-processing circuits. Interface circuits. Control circuits. Embedded electronic systems. Consumer electronic equipment. LED driver circuits. Compact surface-mount PCB designs. Package Include: 1x SS8050 Y1 BJT SMD NPN Transistor 25V 1.5A 300mW SOT-23. Datasheet

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