E13009L Triode Transistor 3V 1mA TO-3P
EGP 35
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E13009L Triode Transistor 3V 1mA TO-3P The E13009L is a robust NPN bipolar junction transistor (BJT) designed for high-voltage and high-speed power switching applications. Housed in a TO-3P package, this transistor offers excellent performance and reliability for a wide range of electronic circuits. It is particularly well-suited for switch-mode power supplies, inverters, motor controllers, and other applications where efficient power handling is critical. Features High Voltage Capability. High-Speed Switching. High Current Handling. TO-3P Package. Wide Operating Range. Specifications Parameter Value Unit Transistor Type NPN – Package Type TO-3P – Collector-Base Voltage (VCBO) 700 V Collector-Emitter Voltage (VCEO) 400 V Emitter-Base Voltage (VEBO) 9 V Collector Current (DC) (IC) 12 A Collector Current (Pulse) (ICP) 24 A Base Current (IB) 6 A Collector Dissipation (Pc) at TC=25°C 130 W DC Current Gain (hFE) 8 to 40 – Transition Frequency (fT) 4 MHz Junction Temperature (TJ) 150 °C Storage Temperature (TSTG) -65 to 150 °C Pinout Applications Switching Regulators. Motor Control. Inverters. Uninterruptible Power Supplies (UPS). Battery Chargers. Solenoid/Relay Drivers. Audio Amplifiers. Package Included: 1x E13009L Triode Transistor 3V 1mA TO-3P. Datasheet: 13009L
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