
2SC4111 NPN Transistor
EGP 75
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2SC4111 NPN Transistor The 2SC4111 NPN Transistor is a high-speed switching power transistor designed for use in horizontal deflection output stages in electronics. It is built using a silicon triple diffusion planar structure, providing enhanced reliability and performance. With a collector-emitter voltage (VCE) of 700V and a high collector-to-base voltage (VCBO) rating of 1500V, the 2SC4111 is capable of handling significant power levels while ensuring safe and efficient operation. Features: High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of forward current transfer ratio hFE Specifications: Parameter Value Collector to base voltage 1500V Collector to emitter voltage 700V Emitter to base voltage 7V Peak collector current 22A Collector current 10A Base current 3.5A Collector power dissipation (TC=25°C) 150W Junction temperature 150°C Storage temperature -55to+150°C Forward current transfer ratio (hFE1, VCE=5V, IC=1A) 5(min) Forward current transfer ratio (hFE2, VCE=5V, IC=7A) 3(min)to8(max) Collector to emitter saturation voltage (IC=7A, IB=2.5A) 5V(max) Base to emitter saturation voltage (IC=7A, IB=2.5A) 1.5V(max) Transition frequency (VCE=10V, IC=1A, f=0.5MHz) 2MHz(typ) Storage time 12µs(max) Fall time 0.6µs(max) Pin Configuration: Applications: Horizontal deflection output in CRT displays. Power amplification in high-voltage switching circuits. Industrial control systems requiring high-speed transistors. Consumer electronics for deflection and power management. Legacy television and monitor repair. Package Include: 1x 2SC4111 NPN Transistor. Datasheet: 2SC4111
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