2N3055 NPN Power Transistor 60V 15A TO-3

Description

2N3055 NPN Power Transistor 60V 15A TO-3 The 2N3055 is one of the most widely used NPN silicon power transistors in the electronics industry. Designed for high-current and medium-voltage applications, it is housed in a robust TO-3 metal package that provides excellent thermal performance and mechanical durability. The transistor is suitable for power switching circuits, series and shunt voltage regulators, audio power amplifiers, and general-purpose power control systems. Thanks to its ability to handle high collector current and significant power dissipation, the 2N3055 remains a popular choice for educational projects, industrial equipment, laboratory power supplies, battery chargers, and audio amplifier designs. Its proven reliability, wide availability, and ease of use make it a preferred component for both professional engineers and electronics hobbyists. Features: High-current NPN power transistor. Rugged TO-3 metal package. Excellent thermal performance. Suitable for linear and switching applications. Reliable operation under heavy loads. Designed for power amplification. Suitable for voltage regulation circuits. High power dissipation capability. Durable metal case construction. Widely used and readily available. Suitable for industrial and educational applications. Good gain characteristics for power circuits. Compatible with heat sink mounting. Specifications: Specification Value Product Type: NPN Power Transistor Model Number: 2N3055 Transistor Material: Silicon Technology: Epitaxial-Base Planar Package Type: TO-3 Metal Case Collector-Base Voltage VCBO: 100V Collector-Emitter Voltage VCER: 70V Collector-Emitter Voltage VCEO: 60V Emitter-Base Voltage VEBO: 7V Collector Current IC: 15A Base Current IB: 7A Total Power Dissipation Ptot: 115W at Tc ≤ 25°C Storage Temperature Tstg: -65°C to 200°C Maximum Junction Temperature Tj: 200°C Thermal Resistance Junction-Case Rthj-case: 1.5°C/W Max Collector Cut-off Current ICEX: 1mA Max at VCE = 100V Collector Cut-off Current ICEX at Tj = 150°C: 5mA Max at VCE = 100V Collector Cut-off Current ICEO: 0.7mA Max at VCE = 30V Emitter Cut-off Current IEBO: 5mA Max at VEB = 7V Collector-Emitter Sustaining Voltage VCEO(sus): 60V Min Collector-Emitter Sustaining Voltage VCER(sus): 70V Min Collector-Emitter Saturation Voltage VCE(sat): 1V Max at IC = 4A, IB = 400mA Collector-Emitter Saturation Voltage VCE(sat): 3V Max at IC = 10A, IB = 3.3A Base-Emitter Voltage VBE: 1.8V Max DC Current Gain hFE: 20 to 70 at IC = 4A DC Current Gain hFE: 5 Min at IC = 10A Transition Frequency fT: 3MHz Second Breakdown Collector Current Is/b: 2.87A at VCE = 40V Pulse Test Condition: 300µs pulse duration, 1.5% duty cycle Pin Configuration: Pin Number Pin Name Description 1 Base (B) Normally used as the trigger to turn ON the transistor 2 Emitter (E) Normally connected to GROUND TAB or CASE Collector (C) Normally connected to LOAD Applications: Linear power supplies. Voltage regulators. Audio power amplifiers. Power switching circuits. Motor control systems. Battery chargers. DC power control. Inverters. Laboratory equipment. Industrial control circuits. Educational electronics projects. High-current driver circuits. Series and shunt regulators. Power amplifier output stages. Package Includes: 1x 2N3055 NPN Power Transistor 60V 15A TO-3. Documents: 2N3055 Datasheet.

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