MJ900 PNP Darlington Transistor TO-3

Description

MJ900 PNP Darlington Transistor TO-3 The MJ900 PNP Darlington Transistor TO‑3 is a high‑power bipolar transistor designed for use in power linear and switching applications where robust current handling and high gain are required. It combines two PNP transistor stages in a monolithic Darlington configuration to deliver high current amplification with a minimal base drive requirement. The TO‑3 metal case provides excellent heat dissipation and mechanical stability, making the MJ900 suitable for demanding power circuits and industrial environments. Features: PNP Darlington configuration for very high current gain. Minimum hFE = 1000 at Ic = -3A. Low collector saturation voltage. High collector current capability up to -8A. Excellent power dissipation of 90W. Rugged TO-3 metal package for better heat transfer. Designed for complementary amplifier output stages. Specifications: Parameter Specification Polarity PNP Type Silicon Darlington Power Transistor Package TO-3 (Metal Can) Absolute Maximum Ratings Collector-Emitter Voltage (VCEO) 60 V Collector-Base Voltage (VCBO) 60 V Emitter-Base Voltage (VEBO) 5 V Continuous Collector Current (IC) 8 A Collector Power Dissipation (PC) @ Tc=25°C 90 W Key Electrical Characteristics Min. DC Current Gain (hFE) @ IC = 3A 1000 Max. Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 3A 2.0 V Thermal Resistance, Junction to Case (RθJC) 1.94 °C/W Pin Configuration: Applications: Complementary audio power amplifiers. Linear voltage regulators. General purpose high-power amplification. Output stage in push-pull amplifier circuits. Industrial control systems. Package Include: 1x MJ900 PNP Darlington Transistor TO-3 Datasheet: MJ900

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