G30N60UFD High-Performance IGBT Transistor N-Channel
EGP 60
See other suppliers →Description
G30N60UFD High-Performance IGBT Transistor N-Channel The G30N60UFD (often listed as SGH30N60UFD or similar variants by Fairchild/ON Semiconductor) is a high-performance Insulated Gate Bipolar Transistor (IGBT) . It is specifically designed for high-voltage, fast-switching applications, particularly in Switching Mode Power Supplies (SMPS). Key Features and Specifications Device Type: N-Channel IGBT with an Anti-Parallel Hyperfast Diode (UFD = Ultra-Fast Diode). Voltage Rating: 600V (Collector-Emitter Breakdown Voltage). Current Rating: Typically rated for 30A to 60A+ (depending on specific data sheet, e.g., 60A/600V or 30A/600V). Key Characteristics: Fast Switching: Optimized for low on-state voltage drop and high-speed operation, featuring a fast 90ns fall time. Low Conduction Loss: Combines the low on-state conduction losses of a bipolar transistor with the high input impedance of a MOSFET. Integrated Diode: Includes a built-in anti-parallel diode, making it ideal for rectifier circuits. Common Applications The G30N60UFD is used in power electronics applications requiring efficient, fast switching: SMPS (Switching Mode Power Supplies): Used in high-power supplies. UPS (Uninterruptible Power Supplies): Used in inverter stages. Motor Drives: Used in industrial motor control systems. Induction Heating: Used in high-frequency heating applications. Summary The G30N60UFD is a robust 600V IGBT designed for industrial-grade power conversion where efficiency and speed are critical, such as in motor control, solar inverters, and high-frequency power supplies. pinout:
From the supplier's page.
makhzan doesn't sell — every offer opens the supplier's own site.