2SK2632 N-Channel MOSFET Transistor 800V 2.5A TO-220F

Description

2SK2632 N-Channel MOSFET Transistor 800V 2.5A TO-220F The 2SK2632 is an N-channel silicon MOSFET designed for ultrahigh-speed switching applications. It blocks a minimum of 800V between drain and source and carries a continuous DC drain current of 2.5A (7.5A pulsed). Its two headline characteristics — low ON-resistance (R DS(on) = 3.6Ω typ. / 4.8Ω max. at V GS = 15V) and low total gate charge (Q g = 15nC typ.) — give it true nanosecond-class switching speed, with typical turn-ON delay and rise times of 15ns and turn-OFF delay and fall times of 45ns and 23ns respectively. Features N-channel silicon MOSFET for ultrahigh-speed switching applications 800V minimum drain-to-source breakdown voltage 2.5A continuous (DC) drain current; 7.5A pulsed (PW ≤ 10µs, duty cycle ≤ 1%) Low ON-resistance: R DS(on) = 3.6Ω typ. / 4.8Ω max. (V GS = 15V, I D = 1.3A) Low total gate charge: Q g = 15nC typ. (V DS = 200V, V GS = 10V, I D = 2.5A) Very fast switching: t d(on) = 15ns, t r = 15ns, t d(off) = 45ns, t f = 23ns (typ.) Low capacitances: C iss = 550pF, C oss = 150pF, C rss = 70pF (typ. at V DS = 20V, f = 1MHz) Very low leakage: I DSS ≤ 1.0µA (V DS = 800V); I GSS ≤ ±100nA (V GS = ±30V) Gate cutoff voltage 3.5V–5.5V; gate rating ±30V Built-in body diode: V SD = 0.84V typ. / 1.2V max. (I S = 2.5A) Power dissipation 2.0W (Ta = 25°C) / 25W (Tc = 25°C); channel temperature up to 150°C 3-pin TO-220FI-LS package; marking K2632 Specifications Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Conditions Rating Unit Drain-to-Source Voltage V DSS — 800 V Gate-to-Source Voltage V GSS — ±30 V Drain Current (DC) I D — 2.5 A Drain Current (Pulse) I DP PW ≤ 10 µs, duty cycle ≤ 1% 7.5 A Allowable Power Dissipation P D Ta = 25°C 2.0 W Allowable Power Dissipation P D Tc = 25°C 25 W Channel Temperature T ch — 150 °C Storage Temperature T stg — –55 to +150 °C Electrical Characteristics (Ta = 25°C) Parameter Symbol Test Conditions Min Typ Max Unit Drain-to-Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = 1 mA 800 – – V Zero Gate-Voltage Drain Current I DSS V GS = 0 V, V DS = 800 V – – 1.0 µA Gate-to-Source Leakage Current I GSS V DS = 0 V, V GS = ±30 V – – ±100 nA Cutoff Voltage V GS(off) V DS = 10 V, I D = 1 mA 3.5 – 5.5 V Forward Transfer Admittance |y fs | V DS = 10 V, I D = 1.3 A 0.7 1.4 – S Static Drain-to-Source On-State Resistance R DS(on) V GS = 15 V, I D = 1.3 A – 3.6 4.8 Ω Input Capacitance C iss V DS = 20 V, f = 1 MHz – 550 – pF Output Capacitance C oss V DS = 20 V, f = 1 MHz – 150 – pF Reverse Transfer Capacitance C rss V DS = 20 V, f = 1 MHz – 70 – pF Total Gate Charge Q g V DS = 200 V, V GS = 10 V, I D = 2.5 A – 15 – nC Turn-ON Delay Time t d(on) Specified test circuit* – 15 – ns Rise Time t r Specified test circuit* – 15 – ns Turn-OFF Delay Time t d(off) Specified test circuit* – 45 – ns Fall Time t f Specified test circuit* – 23 – ns Diode Forward Voltage V SD V GS = 0 V, I S = 2.5 A – 0.84 1.2 V Applications Ultrahigh-speed / high-voltage switching circuits Fast switching power stages where low gate-charge drive and low ON-resistance losses are needed General high-voltage N-channel switch replacement Package Content 1 x 2SK2632 N-Channel MOSFET Transistor 800V 2.5A TO-220F DataSheet 2SK2632

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