2SK1096 N-Channel Power Mosfet Transistor 60V 13A 30W TO-220F
EGP 100
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Specifications: Type Designator: 2SK1096 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 30 W Maximum Drain-Source Voltage |Vds|: 60 V Maximum Gate-Source Voltage |Vgs|: 20 V Continuous Drain Current |Id|: 13 A Maximum Junction Temperature (Tj): 150 °C Rise Time (tr): 30 nS Drain-Source Capacitance (Cd): 200 pF Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm Package: TO-220F 2sk1096 Datasheet
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