G50N60 IGBT Transistor 600V 50A 250W (TO-264)

Description

G50N60 IGBT Transistor 600V 50A 250W (TO-264) The G50N60 IGBT Transistor is a robust, high-efficiency power switching device designed for high-voltage and high-current applications. As an Insulated Gate Bipolar Transistor (IGBT) , it merges the easy gate drive and fast switching characteristics of MOSFETs with the strong current-handling capability of bipolar transistors—making it a reliable choice for demanding power control systems. Built with a short-circuit rated structure , the G50N60 delivers stable performance under harsh operating conditions. It provides low conduction losses and high switching speed , helping improve overall system efficiency and reduce thermal stress in power stages. Its TO-264 package also supports effective heat dissipation, contributing to better reliability and long-term operation. This device is well-suited for industrial power conversion tasks where ruggedness, thermal performance, and switching reliability are critical—such as inverter stages, motor drives, and UPS power modules. Key Features High voltage and current capability: 600V / 50A (at 100°C junction temperature) Low saturation voltage: VCE(sat) ≈ 2.2V at IC = 50A Short-circuit withstand capability: up to 10 µs High-speed switching performance High input impedance for easier gate drive Designed for rugged operation in power control applications Technical Specifications Parameter Value Collector-Emitter Voltage (VCE) 600 V Gate-Emitter Voltage (VGE) ± 20 V Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 50 A Pulsed Collector Current (ICM) 150 A Power Dissipation @ TC = 25°C 250 W Junction Temperature (TJ) -55 to +150°C Storage Temperature -55 to +150°C Gate Charge (Qg) 145 – 210 nC Typical Applications Motor Control & Motor Drives Uninterruptible Power Supplies (UPS) General-purpose Inverters & Power Converters

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