2SK2651 N-Channel MOSFET Transistor 900V 6A TO-220F

Description

2SK2651 N-Channel MOSFET Transistor 900V 6A TO-220F The 2SK2651 is a high-performance, N-channel MOSFET . Designed for high-voltage applications, it offers exceptionally high-speed switching and low on-resistance , making it highly efficient for demanding power conversion tasks . Housed in an isolated TO-220F package, it features a built-in reverse diode with excellent avalanche capability, operating reliably without the risk of secondary breakdown . Features High-Speed Switching Low On-Resistance Low Driving Power Robust Voltage Handling No Secondary Breakdown Repetitive Avalanche Rated Specifications Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Drain-Source Voltage V DS 900 V Continuous Drain Current I D 6 A Pulsed Drain Current I D(puls) 24 A Gate-Source Voltage V GS ±30 V Avalanche Current (Repetitive or Non-Repetitive, Tch ≤ 150°C) I AV 6 A Avalanche Energy E AS 71.9 mJ Max. Power Dissipation P D 50 W Operating Channel Temperature Range T ch 150 °C Storage Temperature Range T stg -55 ~ +150 °C Electrical Characteristics (Tc = 25°C unless otherwise specified) Item / Test Conditions Symbol Typ / Max Values Unit Drain-Source Breakdown Voltage (V GS = 0V, I D = 1mA) V (BR)DSS 900 (Min) V Gate Threshold Voltage (V DS = V GS , I D = 1mA) V GS(th) 3.5 (Min) / 4.0 (Typ) / 4.5 (Max) V Zero Gate Voltage Drain Current (V DS = 900V, T ch = 25°C, V GS = 0V) I DSS 10 (Typ) / 500 (Max) μA Zero Gate Voltage Drain Current (V DS = 900V, T ch = 125°C, V GS = 0V) I DSS 0.2 (Typ) / 1.0 (Max) mA Gate Source Leakage Current (V DS = 0V, V GS = ±30V) I GSS 10 (Typ) / 100 (Max) nA Drain Source On-State Resistance (V GS = 10V, I D = 3A) R DS(on) 1.87 (Typ) / 2.5 (Max) Ω Forward Transconductance (V DS = 25V, I D = 3A) g fs 4 (Min) S Dynamic & Switching Characteristics (f = 1MHz, V GS = 0V, V DS = 25V) Input Capacitance C iss 900 (Typ) pF Output Capacitance C oss 130 (Typ) pF Reverse Transfer Capacitance C rss 70 (Typ) pF Turn-On Delay Time (V CC = 600V, I D = 6A, V GS = 10V, R GS = 10 Ω) t d(on) 25 (Typ) ns Rise Time (V CC = 600V, I D = 6A, V GS = 10V, R GS = 10 Ω) t r 80 (Typ) ns Turn-Off Delay Time (V CC = 600V, I D = 6A, V GS = 10V, R GS = 10 Ω) t d(off) 70 (Typ) ns Fall Time (V CC = 600V, I D = 6A, V GS = 10V, R GS = 10 Ω) t f 40 (Typ) ns Reverse Diode Characteristics Diode Forward On-Voltage (I F = 2xI D , V GS = 0V, T ch = 25°C) V SD 1.0 (Typ) V Reverse Recovery Time (I F = I DR , V GS = 0V, -dI F /dt = 100A/μs, T ch = 25°C) t rr 850 (Typ) ns Reverse Recovery Charge (I F = I DR , V GS = 0V, -dI F /dt = 100A/μs, T ch = 25°C) Q rr 8.5 (Typ) μC Thermal Characteristics Item Symbol Max Value Unit Thermal Resistance (Channel to Case) R th(ch-c) 3.125 °C/W Thermal Resistance (Channel to Air) R th(ch-a) 62.5 °C/W Applications Switching Regulators / Switch-Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) DC-DC Converters General Purpose Power Amplifiers Package Content 1 x 2SK2651 N-Channel MOSFET Transistor 900V 6A TO-220F DataSheet 2SK2651

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