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K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W
K1916

K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W

In stockTransistors & MOSFETsVerified 2 weeks ago

EGP 35

Makers Electronics

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Description

K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W The K1916 is an N-channel MOSFET transistor designed for high-voltage, high-power applications. It offers a drain-to-source voltage rating of 450V, making it suitable for demanding environments where high voltage tolerance is required. This transistor is ideal for use in power supplies, amplifiers, and other high-performance circuits due to its high-speed switching capabilities. One of the key features of the K1916 MOSFET is its ability to handle a continuous drain current of 18A at a junction temperature of 25°C. Its low on-resistance (RDS(on)) of 0.3 to 0.45Ω ensures minimal power loss during operation, contributing to its efficiency. Furthermore, its fast switching characteristics, with a rise time of just 100-150ns, make it highly suitable for switching regulators and other dynamic applications. The K1916 MOSFET offers excellent reliability with minimal lot-to-lot variations, ensuring consistent performance. It also provides robust protection features, including a maximum junction temperature of 150°C and a wide operating temperature range from -55°C to 150°C. With its thermal resistance ratings, the transistor efficiently manages heat dissipation during high-load operations, enhancing its long-term durability. Features: High Drain-Source Voltage : 450V for demanding power applications. Fast Switching Speed : Provides efficient performance in dynamic circuits. Low On-Resistance : 0.3 to 0.45Ω for minimal power loss. Large Continuous Drain Current : 18A at TC = 25°C. Wide Temperature Range : Operating temperature range from -55°C to 150°C. Reliable Performance : Minimum lot-to-lot variations. Efficient Heat Dissipation : Thermal resistance ratings for effective cooling. Specifications: Specification Details Drain-Source Voltage (VDSS): 450V Gate-Source Voltage (VGS): ±30V Drain Current (ID): 18A at TC = 25°C Power Dissipation (Ptot): 80W Junction Temperature (Tj): 150°C Storage Temperature (Tstg): -55°C to 150°C Thermal Resistance (Rth j-c): 1.56°C/W Thermal Resistance (Rth j-a): 30°C/W Gate Threshold Voltage (VGS(th)): 2.5V to 5V Drain-Source Breakdown Voltage (V(BR)DSS): 450V On-Resistance (RDS(on)): 0.3Ω to 0.45Ω Input Capacitance (Ciss): 1800pF to 2700pF Output Capacitance (Coss): 270pF to 410pF Rise Time (tr): 100ns to 150ns Fall Time (tf): 80ns to 120ns Applications: Switching Regulators. Uninterruptible Power Supplies (UPS). Power Amplifiers. Power Management Circuits. General-Purpose Switching Applications. Package Contents: 1x K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W 2SK1916 Datasheet

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K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W · makhzan