FS10UM N-Channel MOSFET Transistor TO-220F
EGP 60
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FS10UM N-Channel MOSFET Transistor TO-220F The FS10UM N-Channel MOSFET Transistor is designed for high-speed switching applications. It is housed in a TO-220F package, ensuring efficient thermal dissipation. This transistor features a drain-source voltage rating of 250V and a maximum drain current of 10A. With an on-state resistance of 0.52Ω, it is ideal for use in power electronic applications such as power supplies, DC-DC converters, and battery chargers. This MOSFET also delivers excellent switching performance, making it suitable for high-efficiency power management in a variety of consumer electronics and industrial devices. Features: High drain-source voltage rating of 250V. Low on-state resistance of 0.52Ω. Maximum drain current of 10A. High-speed switching capabilities. TO-220F package for optimized thermal performance. Specifications: Parameter Value Drain-source voltage 250V Gate-source voltage ±20V Drain current 10A Drain current (Pulsed) 30A Maximum power dissipation 65W Channel temperature -55~+150°C Storage temperature -55~+150°C On-state resistance 0.52Ω Input capacitance 950pF Output capacitance 90pF Reverse transfer capacitance 25pF Turn-on delay time 20ns Rise time 25ns Turn-off delay time 150ns Fall time 40ns Thermal resistance 1.92°C/W Pin Configuration: Applications: Switch-mode power supplies (SMPS). DC-DC converters. Battery chargers. Power supplies for consumer electronics like printers, computers, and VCRs. CS switches in CRT display monitors. Package Include: 1x FS10UM N-Channel MOSFET Transistor TO-220F Datasheet: FS10UM
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