FDP3651U N-Channel PowerTrench MOSFET Transistor TO-220 (100V, 80A, 18mΩ)
EGP 50
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Features RDS(on)=13 mΩ(Typ.), VGS = 10V, ID = 40A Qg(TOT)=49 nc(Typ.), VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/Repetitive Pulse) Specifications: Manufacturer ONSEMI Type of transistor N-MOSFET Technology PowerTrench® Polarisation unipolar Drain-source voltage 100V Drain current 80A Power dissipation 255W Case TO220AB Gate-source voltage ±20V On-state resistance 37mΩ Mounting THT Gate charge 9.8nC Kind of package tube Kind of channel enhanced Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier FDP3651U Datasheet
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