BD650 PNP Transistor 100V 8A
EGP 15
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BD650 PNP Transistor 100V 8A The BD650 PNP Transistor is a high-performance silicon Darlington transistor engineered for demanding electronic applications requiring robust power handling. With a maximum collector-emitter voltage of 100V and a continuous collector current of 8A, this transistor is capable of managing significant power loads, up to 62.5W at a case temperature of 25°C. Its Darlington configuration provides a high DC current gain of 750, enabling efficient load driving with minimal base current, which is particularly advantageous in applications where power efficiency is critical. Housed in a TO-220 package, the BD650 is designed for straightforward integration into various circuit designs. The package’s through-hole mounting facilitates easy installation on printed circuit boards (PCBs) or heat sinks, ensuring effective thermal management during operation. Features: High Voltage Capacity Can handle up to 100V across collector-emitter. Strong Current Handling Supports up to 8A of continuous collector current. High Gain Provides excellent amplification with a current gain of up to 750. Low Saturation Voltage Ensures efficient performance with minimal voltage loss (V<sub>CEsat</sub> = 2.0V at 3A). Complementary Transistor Pair Pairs with the NPN transistor BD649 for balanced operation in circuits. Specifications: Type: PNP Collector-Emitter Voltage, max: 100 V Collector-Base Voltage, max: 120 V Emitter-Base Voltage, max: 5 V Collector Current − Continuous, max: 8 A Collector Dissipation: 62.5 W DC Current Gain (h fe ): 750 Operating and Storage Junction Temperature Range: 65 to +150 °C Package: TO-220 Pin Configuration: Applications: Audio power amplifiers, particularly in output stages. General-purpose switching circuits. Motor control and driver circuits. Power supply regulation and control. Data sheet: BD650
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