KN2907 PNP Transistor
EGP 0.75
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Manufacturer KEC Semicon Mfr. Part # KN2907A-AT/P Package TO-92_Forming1 Datasheet KEC Semicon KN2907A-AT/P Description 10nA 60V 625mW 600mA 100@150mA,10V 200MHz 1.6V@500mA,50mA +150℃@(Tj) TO-92_Forming1 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Transistors/Bipolar Transistors – BJT Datasheet KEC Semicon KN2907A-AT/P RoHS Collector Cut-Off Current (Icbo) 10nA Collector-Emitter Breakdown Voltage (Vceo) 60V Power Dissipation (Pd) 625mW Collector Current (Ic) 600mA DC Current Gain (hFE@Ic,Vce) 100@150mA,10V Transition Frequency (fT) 200MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.6V@500mA,50mA Transistor Type PNP Operating Temperature +150℃@(Tj)
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