TOSHIBA 2SK3878 N-Channel MOSFET Transistor 900V 9A 2−16C1B

Description

TOSHIBA 2SK3878 N-Channel MOSFET Transistor 900V 9A 2−16C1B The TOSHIBA 2SK3878 is a Silicon N-Channel MOS Type (π- MOSIV) field-effect transistor . It operates in enhancement mode and is specifically designed to provide highly efficient performance and reliable high-voltage operation . This component is supplied in a standard TOSHIBA 2-16C1B package (JEITA SC-65 compliant) . Features Low drain-source ON-resistance: R DS(ON) = 1.0 Ω (typ.) High forward transfer admittance: |Y fs | = 7.0 S (typ.) Low leakage current: I DSS = 100 μA (max) (V DS = 720 V) Enhancement model: V th = 2.0 to 4.0 V (V DS = 10 V, I D = 1 mA) Specifications Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 900 V Drain-gate voltage (R GS = 20 kΩ) V DGR 900 V Gate-source voltage V GSS ±30 V Drain current (DC) I D 9 A Drain current (Pulse) I DP 27 A Drain power dissipation (Tc = 25°C) P D 150 W Single pulse avalanche energy E AS 778 mJ Avalanche current I AR 9 A Repetitive avalanche energy E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg -55 to 150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th(ch-c) 0.833 °C/W Thermal resistance, channel to ambient R th(ch-a) 50 °C/W Key Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Typ. / Range Unit Drain-source breakdown voltage V (BR)DSS I D = 10 mA, V GS = 0 V 900 (Min) V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 to 4.0 V Drain-source ON resistance R DS(ON) V GS = 10 V, I D = 4 A 1.0 (1.3 Max) Ω Input capacitance C iss V DS = 25 V, V GS = 0 V, f = 1 MHz 2200 pF Output capacitance C oss V DS = 25 V, V GS = 0 V, f = 1 MHz 190 pF Total gate charge Q g V DD ≈ 400 V, V GS = 10 V, I D = 9 A 60 nC Applications Switching Regulator Applications Package Content 1 x TOSHIBA 2SK3878 N-Channel MOSFET Transistor 900V 9A 2−16C1B DataSheet 2SK3878

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