Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P

Description

Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P The 23N50 is a 23A, 500V N-channel enhancement-mode power MOS field effect transistor produced by Silan Microelectronics using Silan’s proprietary F-Cell™ structure VDMOS technology. The improved planar stripe cell and improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. Features 23A, 500V, RDS(on) (typ.) = 0.21Ω @ VGS = 10V Low gate charge (Qg = 42.51nC typ.) Low Crss (10.1pF typ.) Fast switching (td(on) = 42.2ns, tf = 71.2ns typ.) Improved dv/dt capability High single-pulse avalanche energy: EAS = 2044mJ Operating junction temperature range: −55°C to +150°C Specifications Characteristic Symbol Test Conditions Min. Typ. Max. Unit ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise noted) Drain-Source Voltage V DS – – – 500 V Gate-Source Voltage V GS – – – ±30 V Drain Current (T C = 25°C) I D – – – 23.0 A Drain Current (T C = 100°C) I D – – – 14.55 A Drain Current – Pulsed I DM – – – 92.0 A Power Dissipation (T C = 25°C) P D – – – 280 W Power Dissipation – Derate above 25°C P D – – – 2.24 W/°C Single Pulsed Avalanche Energy (Note 1) E AS – – – 2044 mJ Operating Junction Temperature Range T J – -55 – +150 °C Storage Temperature Range T stg – -55 – +150 °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R θJC – – 0.45 – °C/W Thermal Resistance, Junction-to-Ambient R θJA – – 50 – °C/W ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted) Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250µA 500 – – V Drain-Source Leakage Current I DSS V DS = 500V, V GS = 0V – – 1.0 µA Gate-Source Leakage Current I GSS V GS = ±30V, V DS = 0V – – ±100 nA Gate Threshold Voltage V GS(th) V GS = V DS , I D = 250µA 2.0 – 4.0 V Static Drain-Source On-State Resistance R DS(on) V GS = 10V, I D = 11.5A – 0.21 0.27 Ω Input Capacitance C iss V DS = 25V, V GS = 0V, f = 1.0MHz – 2595.8 – pF Output Capacitance C oss V DS = 25V, V GS = 0V, f = 1.0MHz – 343.8 – pF Reverse Transfer Capacitance C rss V DS = 25V, V GS = 0V, f = 1.0MHz – 10.1 – pF Turn-on Delay Time t d(on) V DD = 250V, R G = 10Ω, I D = 23.0A (Notes 2, 3) – 42.2 – ns Turn-on Rise Time t r V DD = 250V, R G = 10Ω, I D = 23.0A (Notes 2, 3) – 79.0 – ns Turn-off Delay Time t d(off) V DD = 250V, R G = 10Ω, I D = 23.0A (Notes 2, 3) – 125.7 – ns Turn-off Fall Time t f V DD = 250V, R G = 10Ω, I D = 23.0A (Notes 2, 3) – 71.2 – ns Total Gate Charge Q g V DD = 400V, V GS = 10V, I D = 23.0A (Notes 2, 3) – 42.51 – nC Gate-Source Charge Q gs V DD = 400V, V GS = 10V, I D = 23.0A (Notes 2, 3) – 12.9 – nC Gate-Drain Charge Q gd V DD = 400V, V GS = 10V, I D = 23.0A (Notes 2, 3) – 14.34 – nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current (Body Diode) I S Integral reverse P-N junction diode – – 23.0 A Pulsed Source Current I SM – – – 92.0 A Diode Forward Voltage V SD I S = 23.0A, V GS = 0V – – 1.4 V Reverse Recovery Time T rr I S = 23.0A, V GS = 0V, dI F /dt = 100A/µs (Note 2) – 578.21 – ns Reverse Recovery Charge Q rr I S = 23.0A, V GS = 0V, dI F /dt = 100A/µs (Note 2) – 7.89 – µC Applications AC-DC power supplies DC-DC converters H-bridge PWM motor drivers Package Content 1 x Silan 23N50 N-Channel Power MOSFET 500V 23A TO-3P DataSheet SVF23N50PN

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