STP9N90 MOSFET Transistor TO-3P TH

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STP9N90 MOSFET Transistor TO-3P TH The STP9N90 MOSFET transistor, housed in a TO-3P package, is an N-channel power MOSFET designed for high-voltage applications. With a drain-source voltage rating of 900V and a continuous drain current of 9A, it is ideal for use in power management circuits where high efficiency and reliable performance are required. The MOSFET is well-suited for use in switch-mode power supplies (SMPS), inverters, and motor control applications. The transistor features excellent thermal performance, with a low on-resistance (RDS(on)) and low gate charge, ensuring efficient switching and minimal energy loss. This makes the STP9N90 an excellent choice for high-speed switching applications. Its robust construction allows it to handle high surge currents and power dissipation, ensuring reliable operation even under demanding conditions. The MOSFET’s high breakdown voltage makes it suitable for high-voltage applications that require stable and safe performance. The TO-3P package ensures that the STP9N90 MOSFET is easy to integrate into designs while providing good thermal management. Whether used in industrial, automotive, or consumer electronics, the transistor’s high current and voltage handling, combined with its efficient switching, make it a go-to solution for engineers and designers looking for reliability and performance in power electronics. Features: High drain-source voltage (900V). Low on-resistance (RDS(on)) for efficient switching. Low gate charge, minimizing energy loss. High thermal performance with good heat dissipation. Suitable for high-voltage and high-current applications. Robust construction for handling high surge currents. Ideal for switch-mode power supplies and motor control. Reliable operation in demanding conditions. Specifications: Specification Detail Package: TO-3P Type: N-channel MOSFET Drain-Source Voltage (Vds): 900V Continuous Drain Current (Id): 9A Gate Threshold Voltage (Vgs(th)): 3.0V – 5.0V On-Resistance (Rds(on)): 1.4Ω Gate Charge (Qg): 45 – 58 nC Power Dissipation (Pd): 240W (TO-3P) Junction Temperature (Tj): -55°C to +150°C Storage Temperature (Tstg): -55°C to +150°C Applications: Power Management Circuits. Switch-Mode Power Supplies (SMPS). Inverters. Motor Control. High-Voltage Power Electronics. Package Contents: 1x STP9N90 MOSFET Transistor TO-3P TH Datasheet