FQP40N10 N-Channel Power MOSFET Transistor 100V 40A 150W TO-220

FQP40N10 N-Channel Power MOSFET Transistor 100V 40A 150W TO-220 The FQP40N10 N-Channel Power MOSFET Transistor 100V 40A 150W TO-220 is a robust and versatile power switching device engineered to handle significant current and voltage demands in electronic power management applications. Featuring an N-channel enhancement mode MOSFET construction, this component is designed to provide efficient load switching with fast response characteristics and low conduction losses. It is enclosed in a durable TO-220 through-hole package, making it convenient for mounting on printed circuit boards or heatsinks in industrial, automotive, and consumer-grade designs. Features: • N-Channel enhancement mode power MOSFET with high current capability. • Rated for 100 V drain-to-source voltage to support moderate voltage systems. • Continuous drain current of 40 A for robust power handling. • Low on-resistance (~0.04 Ω) to reduce conduction losses. • Fast switching characteristics for efficient PWM and converter operation. • TO-220 through-hole package for easy mounting and heatsinking Specifications: Parameter: Specification Type Designator: 40N10 Transistor Type: MOSFET Channel Type: N-Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage (|Vds|): 100 V Maximum Gate-Source Voltage (|Vgs|): 30 V Maximum Gate-Threshold Voltage (Vgs(th)): 4 V Maximum Drain Current (Id): 40 A Maximum Junction Temperature (Tj): 150 °C Rise Time (tr): 30 ns Drain-Source Capacitance (Cd): 2500 pF Maximum Drain-Source On-State Resistance (Rds): 0.04 Ω Package: TO-220 Pin Configuration: Applications: • Switching power supplies and DC-DC converters. • Motor control and driver circuits. • Automotive power management systems. • Industrial automation and control electronics. • PWM power controllers and relay drivers. Datasheet: 40N10