MJE13005A NPN Power Transistor 400V 4A TO-220

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MJE13005A NPN Power Transistor 400V 4A TO-220 The MJE13005A is a silicon NPN switching transistor presented in a TO-220 plastic package. In the datasheet, it is described as a multi epitaxial mesa device, which gives it a robust identity as a power-oriented transistor rather than a small-signal part. Its construction and package style make it suitable for designs that need a compact but durable semiconductor device. This transistor is positioned as a preferred SGS-THOMSON salestype and is introduced with a focus on switching use. The document emphasizes that it belongs to the family of silicon NPN transistors and that it is intended for demanding electrical environments where stable switching behavior is important. The TO-220 form also suggests a design meant for practical mounting and heat handling. Overall, the MJE13005A is presented as a power transistor built for dependable operation in circuits that need controlled switching and strong electrical endurance. The datasheet layout reinforces its role as a functional component for power electronics, combining a familiar package format with a transistor structure suited to higher-voltage use. Features: Silicon NPN switching transistor. Multi epitaxial mesa construction. TO-220 plastic package. Intended for switch-mode use. Specifications: Item Value Unit Collector-Emitter Voltage (VCEV): 700 V Collector-Emitter Voltage (VCEO, IB = 0): 400 V Emitter-Base Voltage (VEBO, IC = 0): 9 V Collector Current (IC): 4 A Collector Peak Current (ICM): 8 A Base Current (IB): 2 A Base Peak Current (IBM): 4 A Total Power Dissipation (Ptot, Tcase ≤ 25°C): 75 W Storage Temperature: -65 to +150 °C Max. Operating Junction Temperature: 150 °C Thermal Resistance Junction-Case (Rthj-case): 1.67 °C/W Collector Cut-off Current (ICEV) at VCE = 700V: 1 / 5 mA Emitter Cut-off Current (IEBO) at VEB = 9V: 1 mA Collector-Emitter Sustaining Voltage (VCEO(sus), IB = 0): 400 V Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 1A, IB = 0.2A: 0.5 V Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 2A, IB = 0.5A: 0.6 V Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 4A, IB = 1A: 1.0 V Base-Emitter Saturation Voltage (VBE(sat)) at IC = 1A, IB = 0.2A: 1.2 V Base-Emitter Saturation Voltage (VBE(sat)) at IC = 2A, IB = 0.5A: 1.6 V DC Current Gain (hFE) at IC = 1A, VCE = 5V: 10–30 — DC Current Gain (hFE) at IC = 2A, VCE = 5V: 8–60 — Turn-on Time (ton): 0.8 µs Storage Time (ts): 4 µs Fall Time (tf): 0.9 µs Pinout: Applications: Power amplifiers. Motor control circuits. Switching regulators. High-power signal processing. Overvoltage protection circuits. Package Contents: 1x MJE13005A NPN Power Transistor 400V 4A TO-220 Datasheet