2SK1342 N-Channel MOSFET Transistor 900V 8A TO-3P

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2SK1342 N-Channel MOSFET Transistor 900V 8A TO-3P The 2SK1342 is a high-performance N-Channel power MOSFET transistor designed for audio power amplifiers, high-speed switching applications, and industrial power electronics. The transistor is manufactured in a TO-3P package, providing excellent thermal performance and reliable high-power operation for through-hole electronic circuits and professional audio systems. Features: Low drain-source on-state resistance for minimal conduction losses. High speed switching capability. Low drive current requirement. No secondary breakdown mechanism ensures robust operation. Suitable for switching regulator and DC-DC converter applications. High voltage capability with 900V drain-source breakdown voltage. Wide operating temperature range from -55°C to +150°C. Reliable TO-3P package for effective thermal management. Specifications: Parameter Value Transistor Type N-Channel MOSFET Drain-Source Voltage (VDSS) 900V Gate-Source Voltage (VGSS) ±30V Continuous Drain Current (ID) 8A Channel Dissipation (Pch) 100W Drain-Source On-State Resistance (RDS(on)) 1.6Ω (Max.) Drain-Source Breakdown Voltage (V(BR)DSS) 900V (Min.) Zero Gate Voltage Drain Current (IDSS) 250μA (Max.) Input Capacitance (Ciss) 980pF (Typ.) Output Capacitance (Coss) 500pF (Typ.) Reverse Transfer Capacitance (Crss) 100pF (Typ.) Turn-On Delay Time (td(on)) 30ns (Typ.) Rise Time (tr) 50ns (Typ.) Turn-Off Delay Time (td(off)) 200ns (Typ.) Fall Time (tf) 100ns (Typ.) Storage Temperature Range -55°C to +150°C Channel Temperature 150°C (Max.) Package Type TO-3P Mounting Style Through-Hole Pin Configuration: Applications: Switching regulator designs. DC-DC converter circuits. High speed power switching applications. Switch mode power supplies and SMPS designs. Power inverter designs. High-voltage power management systems. Motor drive and control applications. Package Include: 1x 2SK1342 N-Channel MOSFET Transistor 900V 8A TO-3P Datasheet