BD135 Transistor (NPN, 45V, 1.5A)

The BD135 is an NPN bipolar junction transistor fabricated using epitaxial planar technology, housed in a robust SOT-32 plastic package. This construction technique and package are chosen to provide a reliable and cost-effective solution for power management in electronic circuits, offering a practical balance between performance, size, and thermal dissipation. This transistor is specifically engineered as a fundamental building block for analog amplification stages. It is designed to work in tandem with its complementary PNP counterparts, such as the BD136, enabling efficient push-pull output configurations that are central to many audio and driver circuit designs. As a general-purpose power transistor, the BD135 serves as a versatile workhorse component. Its design targets a broad range of low to medium power amplification and switching tasks, where consistent DC current gain and dependable operation are primary requirements for circuit designers. Features: NPN silicon bipolar junction transistor type, allowing controlled current flow from collector to emitter. Medium power handling capability suitable for general-purpose use. High collector current capacity up to 1.5 A for driving moderate loads. Moderate voltage tolerance with maximum collector-emitter endurance of 45 V. Low saturation voltage for efficient switching and reduced power loss. Wide DC current gain range for flexibility in amplification applications. Good thermal performance and reliability in typical operating conditions. Packaged in a TO-126 (SOT-32) form factor that supports through-hole mounting and heat dissipation. Specifications: Key Specification Details for BD135 Transistor Polarity: NPN Absolute Maximum Ratings Collector-Base Voltage (VCBO): 45 V Collector-Emitter Voltage (VCEO): 45 V Emitter-Base Voltage (VEBO): 5 V Collector Current (IC): 1.5 A Collector Peak Current (ICM): 3 A Total Power Dissipation (TCase ≤ 25°C): 12.5 W Key Electrical Characteristic DC Current Gain (hFE): Min. 25 to 250 (typical, depends on group/conditions) Thermal Data Thermal Resistance, Junction-Case: 10 °C/W Pinout Diagram: Pin No Pin Name 1 Emitter 2 Collector 3 Base Applications: Audio Amplifiers. Driver Stages. General-Purpose Switching.

BD135 NPN Bipolar Power Transistor 1.5A 45V SOT-32 The BD135 is an NPN bipolar junction transistor fabricated using epitaxial planar technology, housed in a robust SOT-32 plastic package. This construction technique and package are chosen to provide a reliable and cost-effective solution for power management in electronic circuits, offering a practical balance between performance, size, and thermal dissipation. This transistor is specifically engineered as a fundamental building block for analog amplification stages. It is designed to work in tandem with its complementary PNP counterparts, such as the BD136, enabling efficient push-pull output configurations that are central to many audio and driver circuit designs. As a general-purpose power transistor, the BD135 serves as a versatile workhorse component. Its design targets a broad range of low to medium power amplification and switching tasks, where consistent DC current gain and dependable operation are primary requirements for circuit designers. Features: NPN silicon bipolar junction transistor type, allowing controlled current flow from collector to emitter. Medium power handling capability suitable for general-purpose use. High collector current capacity up to 1.5 A for driving moderate loads. Moderate voltage tolerance with maximum collector-emitter endurance of 45 V. Low saturation voltage for efficient switching and reduced power loss. Wide DC current gain range for flexibility in amplification applications. Good thermal performance and reliability in typical operating conditions. Packaged in a TO-126 (SOT-32) form factor that supports through-hole mounting and heat dissipation. Specifications: Key Specification Details for BD135 Transistor Polarity: NPN Absolute Maximum Ratings Collector-Base Voltage (VCBO): 45 V Collector-Emitter Voltage (VCEO): 45 V Emitter-Base Voltage (VEBO): 5 V Collector Current (IC): 1.5 A Collector Peak Current (ICM): 3 A Total Power Dissipation (TCase ≤ 25°C): 12.5 W Key Electrical Characteristic DC Current Gain (hFE): Min. 25 to 250 (typical, depends on group/conditions) Thermal Data Thermal Resistance, Junction-Case: 10 °C/W Pinout Diagram: Pin No Pin Name 1 Emitter 2 Collector 3 Base Applications: Audio Amplifiers. Driver Stages. General-Purpose Switching. Package Contents: 1x BD135 NPN Bipolar Power Transistor 1.5A 45V SOT-32 Datasheet