IRF4905 P-Channel MOSFET Transistor -55V, 74A, 20mΩ – TO-220

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IRF4905 P-Channel MOSFET Transistor -55V, 74A, 20mΩ – TO-220 The IRF4905 is a fifth-generation P-Channel HEXFET power MOSFET that represents a significant advancement in power semiconductor technology. It is engineered using sophisticated processing techniques to maximize efficiency within a compact silicon area. This device is fundamentally designed as a robust and reliable switch, capable of handling high current levels while maintaining excellent control characteristics for the designer. At the heart of its performance is an extremely low on-resistance, which is a key factor in minimizing power loss and heat generation during operation. This intrinsic efficiency is complemented by its fast switching capabilities, allowing for effective performance in circuits that require rapid turn-on and turn-off transitions. The device is built to endure stressful electrical conditions, being fully avalanche-rated to manage unexpected voltage spikes. Housed in the industry-standard TO-220 package, the IRF4905 balances effective thermal performance with cost-effectiveness, making it a versatile choice for a broad commercial and industrial audience. This packaging facilitates easier mounting to heat sinks, supporting its operation at power dissipation levels up to approximately 50 watts and up to a high junction temperature of 175°C, underscoring its durability in demanding environments. Features: Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. High 175°C Operating Temperature. Fast Switching Speed. P-Channel Polarity. Fully Avalanche Rated. Industry-Standard TO-220 Package. Specifications: Category Parameter Value Unit Condition Voltage: Drain-to-Source Voltage (Vdss) -55 V Current: Continuous Drain Current (Id) -74 A Tc = 25°C Continuous Drain Current (Id) -52 A Tc = 100°C Resistance: Static Drain-to-Source On-Resistance (Rds(on)) 0.02 (max) Ω Vgs = -10V, Id = -38A Gate Threshold: Gate Threshold Voltage (Vgs(th)) -2.0 to -4.0 V Power: Power Dissipation (Pd) 200 W Tc = 25°C Thermal: Junction-to-Case Thermal Resistance (RthJC) 0.75 (max) °C/W Operating Junction Temperature (Tj) -55 to +175 °C Switching Charge: Total Gate Charge (Qg) 180 (typ) nC Vds = -44V, Id = -38A Pinout Diagram: Footprint Diagram: Applications: Power Supply Switching Circuits. Motor Control and Drive Systems. DC-DC Converters. High-Current Load Switching. Battery Management/Protection Circuits. Package Contents: 1x IRF4905 P-Channel MOSFET Transistor -55V, 74A, 20mΩ – TO-220 Datasheet