IRFP350 MOSFET (400V, 16A)

Name: IRFP350 MOSFET (400V, 16A)
Brand: Future Electronics Egypt

Part number IRFP350

Brand · Future Electronics Egypt

2 offers in stock at 2 shopsEGP 40 – 70

EGP 40 at Future Electronics Egypt

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IRFP350 MOSFET (400V, 16A)
Future Electronics Egypt
checked 13 days ago
EGP 40
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IRFP350 N-Channel Power MOSFET 400V 16A TO-247
Makers Electronics
checked 19 days ago
EGP 70
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Details

FromMakers ElectronicsFuture Electronics Egypt

From Makers Electronics's description

IRFP350 N-Channel Power MOSFET 400V 16A TO-247 The IRFP350 is a third-generation N-Channel Power MOSFET developed using International Rectifier’s HEXFET technology. This generation represents a significant engineering effort to combine high performance with cost-effectiveness. The design philosophy centers on delivering a robust and ruggedized semiconductor that does not sacrifice switching speed for its ability to handle high power levels, providing a balanced solution for demanding electronic circuits. Housed in a TO-247 package, this device is engineered for commercial and industrial applications where the higher power dissipation exceeds the capabilities of smaller packages like the TO-220. A key mechanical advantage of this package is its isolated central mounting hole, which simplifies the installation of an insulating bush and enhances safety by providing greater creepage distances between the pins. This design inherently helps in meeting stringent safety specifications. At its core, the HEXFET technology ensures low conduction losses, characterized by a low on-resistance. The device is built to withstand stressful operating conditions, being fully rated for repetitive avalanche events, which demonstrates its intrinsic ruggedness. Furthermore, it features a dynamic dv/dt rating and includes an integral body diode, making it a comprehensive and reliable component for power switching tasks. Features: Dynamic dv/dt Rating. Repetitive Avalanche Rated. Isolated Central Mounting Hole. Fast Switching. Ease of Paralleling. Simple Drive Requirements. Third Generation HEXFET Technology. Ruggedized Device Design. Low On-Resistance. Cost-Effectiveness. Specifications: Parameter Value Unit Drain-to-Source Voltage (V_{DSS}): 400 V Continuous Drain Current (I_D) @ T_c = 25°C: 16 A Static Drain-to-Source On-Resistance (R_{DS(on)}): 0.30 Ω Total Gate Charge (Q_g): 150 nC Power Dissipation (P_D) @ T_c = 25°C: 190 W Gate-to-Source Voltage (V_{GS}): ±20 V Input Capacitance (C_{iss}): 2600 pF Junction-to-Case Thermal Resistance (R_{θJC}): 0.65 °C/W Operating Junction Temperature (T_J): -55 to +150 °C Pinout Diagram: Footprint Diagram: Applications: Switch Mode Power Supplies (SMPS). Motor Controls and Drivers. Power Conversion Systems. Inverters. Uninterruptible Power Supplies (UPS). Industrial and Commercial Power Controls. Package Contents: 1x IRFP350 N-Channel Power MOSFET 400V 16A TO-247 Datasheet