S9015 PNP Small Signal Transistor

Characteristics of S9015 Transistor Type: PNP Collector-Emitter Voltage, max: -45 V Collector-Base Voltage, max: -50 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.1 A Collector Dissipation: 0.4 W DC Current Gain (h fe ): 60 to 1000 Transition Frequency, min: 150 MHz Operating and Storage Junction Temperature Range: -55 to +150 °C Package: TO-92 S9015 Bipolar Transistor Characteristics of S9015 Transistor Type: PNP Collector-Emitter Voltage, max: -45 V Collector-Base Voltage, max: -50 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.1 A Collector Dissipation: 0.4 W DC Current Gain (h fe ): 60 to 1000 Transition Frequency, min: 150 MHz Operating and Storage Junction Temperature Range: -55 to +150 °C Package: TO-92 Pinout of S9015 The S9015 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Here is an image showing the pin diagram of this transistor. Classification of h FE The S9015 transistor can have a current gain of 60 to 1000 . The gain of the S9015A will be in the range from 60 to 150 , for the S9015B it will be in the range from 100 to 300 , for the S9015C it will be in the range from 200 to 600 , for the S9015D it will be in the range from 400 to 1000 . Complementary NPN transistor The complementary NPN transistor to the S9015 is the S9014. Replacement and Equivalent for S9015 transistor You can replace the S9015 with the KSP55, KSP56, KTC9015, MPSW55, MPSW55G, MPSW56, MPSW56G or SS9015.

S9015 Key Features High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity Specifications Attribute Value Category Transistors/Bipolar Transistors – BJT Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. S9015 RoHS Collector Cut-Off Current (Icbo) 50nA Collector-Emitter Breakdown Voltage (Vceo) 45V Power Dissipation (Pd) 450mW Collector Current (Ic) 100mA DC Current Gain (hFE@Ic,Vce) 300@1mA,5V Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,10mA Transistor Type PNP Operating Temperature +150℃@(Tj) Application General Purpose Switching and Amplification