BU941ZP NPN Power Darlington Transistor TO-3P

BU941ZP NPN Power Darlington Transistor TO-3P The BU941ZP is a silicon NPN Darlington power transistor manufactured by INCHANGE Semiconductor. It is designed for demanding power-switching applications and features a built-in clamping Zener diode to help manage voltage transients. Its Darlington configuration provides high current gain, allowing a relatively small base current to control a larger collector current. This transistor is intended for automotive environments, especially electronic ignition power actuators. It can also be considered for compatible high-power switching circuits where its electrical ratings and clamping characteristics meet the design requirements. The device requires suitable thermal management, and its maximum voltage, current, power dissipation, and operating temperature ratings must be observed during circuit design. Features: • NPN Darlington power transistor design. • Built-in clamping Zener diode. • High current amplification. • Designed for power-switching applications. • Suitable for automotive electronic ignition systems. • High operating junction temperature capability. • Through-hole power package. Specifications: Product Attribute: Attribute Value Product Category: Darlington Transistors Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 15 A Pd – Power Dissipation: 155 W Mounting Style: Through Hole Package/Case: TO-3P Minimum Operating Temperature: – 65 C Maximum Operating Temperature: + 150 C Series: BU941Z Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 300 Pinout: Applications: • Automotive electronic ignition systems • Automotive power actuators • High-current switching circuits • Inductive load switching • Power control circuits • Automotive electronics repair • High-power electronic switching systems Packages Included: • 1 × BU941ZP NPN Power Darlington Transistor TO-3P. Documents: BU941ZP Datasheet