MLG25N120RK IGBT Transistor TO-247 1350V 25A 208W

From the shop's description

MLG25N120RK IGBT Transistor for High-Voltage Switching The MLG25N120RK is a high-performance Insulated Gate Bipolar Transistor designed for high-voltage and high-current power switching applications. It features a collector-emitter breakdown voltage of 1350V, a continuous collector current of 25A, and a power dissipation of 208W, making it suitable for demanding industrial and automotive applications. The device is housed in a TO-247 package, which provides excellent thermal performance and ease of mounting. Utilizing Field Stop technology, it offers improved efficiency and reliability, with a low saturation voltage of 2.5V at 25A, ensuring minimal power loss during operation. Features: 1350V Breakdown Voltage Low saturation voltage: VCE(sat), typ=2.5V@IC=25A and TC=25℃ FS Tench Technology, Positive temperature coefficient Specifications: Attribute Value Category Transistors/IGBT Transistors Turn-off Delay Time (Td(off)) 198ns Power Dissipation (Pd) 208W Turn-on Delay Time (Td(on)) 34ns Collector Current (Ic) 25A Collector-Emitter Breakdown Voltage (Vces) 1.35kV Input Capacitance (Cies@Vce) 2.37nF@30V Type FS(Field Stop) Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.5V@1mA Total Gate Charge (Qg@Ic,Vge) 142nC@25A,15V Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) 2.5V@25A,15V Package TO-247 Applications: Solar Converters Welding Converters UPS Data Sheet: MLG25N120RK