IR2112S SOIC-16-300mil Gate Drive IC SMD

From the shop's description

The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. Summary of Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20 V Undervoltage lockout for both channels 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Logic and power ground +/- 5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Diagrams Parametrics Parametrics IR2112S Channels 2 Configuration High-side and low-side Input Vcc min max 10 V 20 V Isolation Type Functional levelshift Output Current (Sink) 0.5 A Output Current (Source) 0.25 A Turn Off Propagation Delay 105 ns Turn On Propagation Delay 125 ns V BS UVLO (On) 8.5 V V BS UVLO (Off) 8.1 V V CC UVLO (On) 8.6 V V CC UVLO (Off) 8.2 V Voltage Class 600 V Applications Consumer electronics Motor control and drives Power tools Robotics Smart buildings Data Sheet – IR2112