2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92

2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92, photo 2

2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92, photo 3

2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92

Part number 2N7000

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2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92
Makers Electronics
checked 19 days ago
EGP 3.50
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2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original
Makers Electronics
checked 13 days ago
EGP 6.50
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2N7000 Transistor(60V ,200mA) N-Channel
Most ElectronicOut of stock
checked 13 days ago
EGP 2.25
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FromMost ElectronicMakers Electronics (1)Makers Electronics (2)

From Most Electronic's description

2N7000 N-Channel Small Signal 60V, 200mA 2N7000 MOSFET Pinout Configuration: Pin Number Pin Name Description 1 Source Current flows out through Source 2 Gate Controls the biasing of the MOSFET 3 Drain Current flows in through Drain Features: Small signal N-Channel MOSFET Drain-Source Voltage (VDS) is 60V Continuous Drain Current (ID) is 200mA Pulsed Drain Current (ID-peak) is 500mA Gate threshold voltage (VGS-th) is 3V Gate-Source Voltage is (VGS) is ±20V Turn ON and Turn off time is 10ns each. Available in To-92 Package Note: Complete Technical Details can be found in the 2N7000 datasheet given at the end of this page. Where to use 2N7000: 2N7000 is a small signal N-channel MOSFET . MOSFET’s are power electronic switches just like transistors, but with a higher current and voltage rating. The 2N7000 MOSFET can be used to switch loads which operates on less than 60V (VDS) and 200mA (ID). This mosfet comes in a compact TO-92 package and has a threshold voltage of 3V, hence if you looking for a small mosfet to switch a load then this IC could suit your purpose. How to use 2N7000: A Mosfet has three terminals – Drain, source and Gate. Current always flows in through the Drain and flows out through the Source. The Gate pin acts as a switch for turning ON or OFF the mosfet. If the gate is connected to Ground then the mosfet is off that is there will be no connection between Drain and source (Open). If the Gate is provided with its gate source Voltage (VGS) then the MOSFET will be ON, that is the Drain and source pin will be connected together (Closed). Thus by controlling the Voltage (VGS) we can switch the Mosfet hence the MOSFET is a voltage controlled device. The Gate Source Voltage (VGS) is a critical parameter while using the transistor. For this transistor, the VGS is 20V, hence when we provide this voltage the MOSFET will be fully closed. Any values in between 20V is make the MOSFET to close partially thus creating a partial connection. The load which is being switched by the MOSFET can be upto 60V (VDS) and can consume upto 200mA (ID). I have given a very simple circuit below which uses this MOSFET to control a load motor of 24V 2A. The current and voltage values when the switch is closed and opened can also be observed. As we know the Gate Source voltage of this Mosfet is 20V, hence we have used 20V to turn ON the MOSFET. When the gate switch is open, the Gate pin of the Mosfet should be connected to ground to turn off the Load, hence we have used a 10K pull down resistor (RGS) to turn off the MOSFET after it is turned ON. The resistor RG is a current limiting resistor which limits the required Gate current. If the load controlled by the Mosfet is a Inductive load like the Motor that we have used here, then it is mandatory to use a Flywheel (a.k.a freewheel) diode safely discharge the charge accumulated by the Inductive coil.

From Makers Electronics's description

2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92 The 2N7000 is an N-channel enhancement mode field effect transistor produced using high cell density DMOS technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This device is a voltage-controlled small signal switch and is particularly suited for low-voltage, low-current applications. The datasheet specifies the 2N7000 for a maximum continuous drain current of 200mA and a maximum pulsed drain current of 500mA. It is supplied in a TO-92 package. Features N-channel enhancement mode field effect transistor High-density cell design for low RDS(ON) Voltage-controlled small signal switch Rugged and reliable construction High saturation current capability Fast switching performance 60V drain-source voltage rating 200mA continuous drain current 500mA pulsed drain current 400mW maximum power dissipation TO-92 package Specifications Specification Value Part Number 2N7000 Device Type N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage (VDSS) 60 V Drain-Gate Voltage (VDGR) 60 V Gate-Source Voltage, Continuous (VGSS) ±20 V Gate-Source Voltage, Non-Repetitive (tp < 50 µs) ±40 V Maximum Drain Current, Continuous (ID) 200 mA Maximum Drain Current, Pulsed (ID) 500 mA Maximum Power Dissipation (PD) 400 mW Power Derating Above 25°C 3.2 mW/°C Operating and Storage Temperature (TJ, TSTG) -55°C to +150°C Maximum Lead Temperature for Soldering 300°C for 10 seconds Thermal Resistance, Junction-to-Ambient (RθJA) 312.5°C/W Drain-Source Breakdown Voltage (BVDSS) 60 V min. Zero Gate Voltage Drain Current (IDSS) 1 µA max. at VDS = 48 V, VGS = 0 V IDSS at TJ = 125°C 1 mA max. Gate-Body Leakage, Forward (IGSSF) 10 nA max. Gate-Body Leakage, Reverse (IGSSR) -10 nA max. Gate Threshold Voltage (VGS(th)) 0.8 V min., 2.1 V typ., 3 V max. Static Drain-Source On-Resistance (RDS(ON)) 1.2 Ω typ., 5 Ω max. at VGS = 10 V, ID = 500 mA RDS(ON) at TJ = 125°C 1.9 Ω typ., 9 Ω max. RDS(ON) at VGS = 4.5 V, ID = 75 mA 1.8 Ω typ., 5.3 Ω max. Drain-Source On-Voltage (VDS(ON)) 0.6 V typ., 2.5 V max. at VGS = 10 V, ID = 500 mA VDS(ON) at VGS = 4.5 V, ID = 75 mA 0.14 V typ., 0.4 V max. On-State Drain Current (ID(ON)) 75 mA min., 600 mA typ. at VGS = 4.5 V, VDS = 10 V Forward Transconductance (gFS) 100 mS min., 320 mS typ. Input Capacitance (Ciss) 20 pF typ., 50 pF max. Output Capacitance (Coss) 11 pF typ., 25 pF max. Reverse Transfer Capacitance (Crss) 4 pF typ., 5 pF max. Turn-On Time (ton) 10 ns Turn-Off Time (toff) 10 ns Package TO-92 Applications The 2N7000 is particularly suited for low-voltage, low-current applications such as: Small servo motor control Power MOSFET gate drivers General switching applications Voltage-controlled small signal switching Low-current power control circuits Package Content 1 x 2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92 DataSheet 2N7000

From Makers Electronics's description

2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original The 2N7000 is a compact N-channel enhancement-mode MOSFET designed for signal-level switching and low-power control. It uses onsemi’s high-density DMOS cell structure to minimize on-state resistance while keeping package size small. Engineered for predictable gate behavior, it accepts modest gate voltages and is straightforward to drive from logic signals or microcontroller GPIOs, making circuit integration fast and reliable. Optimized for fast switching at low currents, the device delivers consistent performance across a wide temperature range and handles short pulsed currents above its continuous rating. Its low input capacitance and modest gate charge reduce switching losses in small-signal applications. Designers value its clean turn-on and turn-off transitions for avoiding unwanted oscillation in sensitive analog and mixed-signal circuits. Offered in both through-hole (TO-92) and surface-mount (SOT-23) package CASE 135AR, the 2N7000 suits both prototyping and space-constrained production uses. Its combination of ruggedness, simple gate requirements, and low thermal demands makes it ideal for signal-level switching, level shifting, and driver roles in consumer electronics, industrial controls, and hobbyist projects. Its simple handling and robust tolerance simplify assembly and maintenance in varied environments. Features: High density DMOS cell design for low RDS(on). Voltage-controlled small-signal switching behavior. Rugged and reliable construction. High saturation and pulsed current capability. Pb-Free and halogen-free manufacturing. Specifications: Parameter Symbol Value Conditions Unit Absolute Maximum Ratings Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGS ±20 Continuous V Continuous Drain Current ID 200 TC = 25°C mA Pulsed Drain Current IDM 500 mA Maximum Power Dissipation PD 400 TC ≤ 25°C mW Thermal Characteristic Junction-to-Ambient Thermal Resistance RθJA 312.5 °C/W Electrical Characteristics Drain-Source Breakdown Voltage BVDSS 60 min VGS = 0 V, ID = 10 µA V Gate Threshold Voltage VGS(th) 0.8 – 3.0 VDS = VGS, ID = 1 mA V Static Drain-Source On-Resistance RDS(on) 5 max VGS = 10 V, ID = 500 mA Ω Static Drain-Source On-Resistance RDS(on) 5.3 max VGS = 4.5 V, ID = 75 mA Ω Zero Gate Voltage Drain Current IDSS 1 max VDS = 48 V, VGS = 0 V µA Forward Transconductance gfs 100 min VDS = 10 V, ID = 200 mA mS Dynamic Characteristics Input Capacitance Ciss 20 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Output Capacitance Coss 11 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Reverse Transfer Capacitance Crss 4 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Turn-On Time ton 10 max VDD=15V, ID=500mA, RGEN=25Ω ns Turn-Off Time toff 10 max VDD=15V, ID=500mA, RGEN=25Ω ns Pinout Diagram: Footprint Diagram: Applications: Low-Side Switching for Microcontroller Loads. Logic Level Signal Inversion. Driving Small Relays and Solenoids. LED Lighting Control and Dimming. Multiplexing Digital Signals (Analog Switch). Motor Direction Control in H-Bridge Circuits. Protecting Input/Output Pins with Clamp Diodes. Simple Oscillator and Waveform Generator Circuits. Level Shifting Between Different Voltage Domains. Solid-State Relay for Low-Power Applications. Package Contents: 1x 2N7000 N-Channel Small MOSFET Signal 60V, 200mA TO−92 CASE 135AR – Original Datasheet

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