2SJ174 P-Channel MOSFET Transistor 60V 30A TO-220

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2SJ174 P-Channel MOSFET Transistor 60V 30A TO-220 The 2SJ174 P-Channel MOSFET Transistor 60V 30A TO-220 is a high-current, high-voltage power device built on TrenchFET® technology. Rated for 60 V drain-source voltage and 30 A continuous drain current, it delivers extremely low on-resistance (0.055 Ω at V GS =–10 V) and fast switching, with typical total gate charge of 67 nC. The 2SJ174 is tested 100% for gate resistance and withstands unclamped inductive switching (UIS), making it ideal for load-switching, DC/DC converters, and other demanding power-switch applications. Features TrenchFET® power MOSFET for low conduction and switching losses. Drain-source voltage V DSS = 60 V. Continuous drain current I D = 30 A (TC=25 °C). On-state resistance R DS(ON) = 0.055 Ω at V GS =10 V. Total gate charge Q g ≈ 67 nC at V DS =30 V, V GS =10 V. Avalanche energy rating E AS = 51 mJ, pulsed current I DM = –100 A. 100 % gate-resistance and UIS tested for reliability. Thermal resistances: R θJC = 3 °C/W; R θJA = 60 °C/W (PCB mount). Specifications ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain–Source Voltage V DSS –60 V Gate–Source Voltage V GSS ±20 V Continuous Drain Current I D –30 A Pulsed Drain Current (t = 300 μs) I DM –100 A Avalanche Current I AS –32 A Single Avalanche Energy (L = 0.1 mH) E AS 51 mJ Maximum Power Dissipation (T C = 25 °C) P D 41.7 W Maximum Power Dissipation (T A = 25 °C) P D 2.1 W Operating Junction & Storage Temperature Range T J , T stg –55 to +150 °C Dimensions Applications High-side and low-side power switches. DC/DC converter synchronous rectification. Motor drivers and load-switching circuits. Telecom and server power supplies. Automotive and industrial power management. Documents 2SJ174 Datasheet.