From Micro Ohm's description

IRF830 N-Channel Power MOSFET Transistor 4.5A 500V 1.5Ω TO-220 The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. The mosfet will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage. Pin Configuration Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 4.5A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Features N-Channel Power MOSFET Continuous Drain Current (I D ): 4.5A Gate threshold voltage (V GS-th ) is 10V (limit = ±20V) Drain to Source Breakdown Voltage: 500V Drain Source Resistance (R DS ) is 1.5 Ohms Rise time and fall time is 16nS and 16nS Available in To-220 package Note: Complete technical details can be found at the IRF830 datasheet linked at the bottom of the page Alternatives for IRF830 8N50, FTK480, KF12N50 Other N-channel MOSFETS IRF840 , IRF740 , BSS138, IRF520 , 2N7002 , BS170, BSS123, IRF3205, IRF1010E About IRF830 MOSFET The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V with a drain current of 4.5A. If you need a relatively high current Mosfet you can check the IRF840. Both Mosfet has a gate threshold voltage of 10V across the Gate and Source pin with a on-state resistance of 1.5Ω. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc. One considerable disadvantage of the IRF830 Mosfet is its high on-resistance (R DS ) value which is about 1.5 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits. Applications Switching high power devices Inverter Circuits DC-DC Converters Control speed of motors LED dimmers or flashers High Speed switching applications 2D model of the component If you are designing a PCB or Perf board with this component then the following picture from the IRF830 Datasheet will be useful to know its package type and dimensions. Component Datasheet IRF830 MOSFET Datasheet

From Makers Electronics's description

IRF830 N-Channel MOSFET 500V 4.5A TO-220 The IRF830 is a high-voltage N-Channel enhancement-mode power MOSFET designed for applications requiring efficient switching of high-voltage loads. Featuring a maximum drain-to-source voltage of 500V and a continuous drain current rating of 4.5A, the device is widely used in power supplies, inverter circuits, motor control systems, and industrial switching applications. The TO-220 package provides excellent thermal performance and allows convenient mounting to a heatsink when higher power dissipation is required. Features: N-Channel enhancement-mode power MOSFET. High drain-source voltage rating of 500V. Continuous drain current up to 4.5A. TO-220 through-hole package. Fast switching performance. Low gate charge characteristics. Note: Complete technical details can be found at the IRF830 datasheet linked at the bottom of the page Specifications: Parameter Value Part Number IRF830 Transistor Type N-Channel MOSFET Mounting Type Through Hole Package TO-220 Drain-Source Voltage (VDS) 500V Continuous Drain Current (ID) 4.5A Gate-Source Voltage (VGS) ±20V Drain-Source Resistance (RDS(on)) 1.5Ω Max Power Dissipation (PD) 75W Gate Charge (Qg) 27nC Typical Rise Time 16ns Typical Fall Time 16ns Typical Operating Temperature -55°C to +150°C Number of Pins 3 Pin Configuration: Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 4.5A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Applications: Switching high power devices Inverter Circuits DC-DC Converters Control speed of motors LED dimmers or flashers High Speed switching applications Package Include: 1x IRF830 N-Channel MOSFET 500V 4.5A TO-220 Datasheet

From Most Electronic's description

IRF830 N-Channel MOSFET (500V, 4.5A) is a high-quality electronic component designed for Arduino, prototyping, and educational electronics. IRF830 N-Channel MOSFET (500V, 4.5A) It’s perfect for DIY makers, students, and anyone building custom electronic circuits or STEM kits.