FGL80N120 IGBT Power Transistor 1200V 80A TO−247−3LD

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FGL80N120 IGBT Power Transistor 1200V 80A TO−247−3LD The FGL80N120 IGBT Power Transistor 1200V 80A TO−247−3LD utilizes advanced Trench Field‑Stop technology to deliver low collector‑emitter saturation voltage and optimized switching performance. Packaged in a rugged TO‑247‑3LD case, it combines high breakdown capability with an integrated fast‑recovery anti‑parallel diode and positive temperature coefficient for reliable operation under heavy load and harsh environments. Features 1200 V collector‑emitter breakdown voltage. Low V CE(sat) , typ. 2.35 V @ 80 A, T C =25 °C. High continuous collector current: 80 A @ T C =100 °C (160 A @ T C =25 °C). Pulsed collector current up to 320 A. Fast switching: turn‑on delay ≈ 49 ns; turn‑off delay ≈ 254 ns. Integrated fast‑recovery anti‑parallel diode. Positive temperature coefficient for safe parallel operation. RoHS‑compliant construction. Specifications Absolute Maximum Ratings Symbol Parameter Value Units V CES Collector-Emitter Voltage 1200 V I C Collector Current @ T C = 25°C 160 A Collector Current @ T C = 100°C 80 A I CM Pulsed Collector Current, tp limited by T Jmax 320 A I F Diode Continuous Forward Current @ T C = 25°C 160 A Diode Continuous Forward Current @ T C = 100°C 80 A I FM Diode Maximum Forward Current, limited by T Jmax 160 A V GES Gate-Emitter Voltage ±20 V P D Power Dissipation @ T C = 25°C 367 W T Jmax Operating Junction Temperature 150 °C T stg Storage Temperature Range –55 to 150 °C T L Maximum Temperature for Soldering 260 °C Dimensions Applications BLDC motor drives and industrial motor control. Uninterruptible power supplies (UPS) and portable power stations. Power factor correction (PFC) circuits. Solar inverters and renewable‑energy converters. General‑purpose high‑voltage switching in industrial electronics. Documents FGL80N120 Datasheet .