Tip3055 Bipolar Transistors BJT 100V 90W 15A NPN TO-247

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Tip3055 Bipolar Transistors BJT 100V 90W 15A NPN TO-247 The TIP3055 is an NPN Bipolar Junction Transistor (BJT) manufactured using epitaxial-base planar technology. This specific production process is chosen to create a robust and reliable semiconductor structure capable of handling significant power levels. The technology provides a solid foundation for the device’s key electrical characteristics, making it a suitable component for a range of power control applications. This transistor is designed to offer a balanced performance profile, characterized by a low collector-emitter saturation voltage which helps to minimize power loss during operation. It is engineered to deliver effective performance in both linear and switching contexts. The device is part of a complementary pair with the PNP TIP2955, which allows for the design of symmetrical circuit output stages, such as those commonly found in audio amplifier systems. The component is encased in a TO-247 package, a industry-standard format for high-power devices. This package is physically robust and is designed to facilitate efficient heat transfer away from the semiconductor die, which is critical for maintaining performance and reliability when the device is operating at its high power dissipation limits. Features: Low collector-emitter saturation voltage. Complementary NPN – PNP transistors. Suitable for audio, power linear and switching applications. Manufactured in epitaxial-base planar technology. Specifications: Parameter Value Unit Collector-Emitter Voltage (VCEO): 100 V Collector Current (IC): 15 A Total Power Dissipation (Ptot): 90 W DC Current Gain (hFE): 20 – 70 Collector-Emitter Saturation Voltage (VCE(sat)): 1 V Base-Emitter Voltage (VBE): 1.8 V Max. Operating Junction Temperature (Tj): 150 °C Pinout Diagram: Footprint Diagram: Applications: General purpose. Audio Amplifier. Package Contents: 1x Tip3055 Bipolar Transistors BJT 100V 90W 15A NPN TO-247 Datasheet