2SK2082 N-Channel MOSFET Transistor 900V 9A TO-3P

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2SK2082 N-Channel MOSFET Transistor 900V 9A TO-3P The 2SK2082 is a high-performance N-channel power MOSFET designed for high-voltage and high-speed switching applications. It belongs to the FAP-IIA series and is optimized to handle demanding power electronics tasks such as switching regulators, DC-DC converters, and UPS systems. With its ability to operate at very high drain-source voltages, it is suitable for circuits that require stable and efficient power control. This MOSFET features low on-resistance and fast switching characteristics, which help reduce power losses and improve overall efficiency in electronic designs. It also offers strong reliability due to its avalanche capability and absence of secondary breakdown, making it ideal for robust and long-lasting power systems. Its low gate drive requirement allows easy interfacing with control circuits, further enhancing its usability in a wide range of applications. Features: High-speed switching capability. Low on-resistance. High voltage handling. No secondary breakdown. Low gate drive power requirement. Avalanche ruggedness. High reliability for power applications. Specifications: Parameter Value Drain-Source Voltage (Vds) 900V Continuous Drain Current (Id) 9A Pulsed Drain Current (Id pulse) 36A Gate-Source Voltage (Vgs) ±30V Power Dissipation (Pd) 150W Drain-Source On Resistance (Rds(on)) 1.4Ω Gate Threshold Voltage 2.5 – 3.5V Operating Temperature Range -55°C to +150°C Pinout: Pin Number Name Description 1 Gate Controls the MOSFET switching 2 Drain Connected to load 3 Source Common reference (ground) Applications: Switching regulators. DC-DC converters. Uninterruptible Power Supplies (UPS). Power amplifiers. High-voltage switching circuits. Industrial power control systems. Package Included: 1x 2SK2082 N-Channel MOSFET Transistor 900V 9A TO-3P. Documents: 2SK2082 Datasheet.