IRF620 N-Channel Power MOSFET Transistor 200V 6A 0.8Ω TO-220

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IRF620 N-Channel Power MOSFET Transistor 200V 6A 0.8Ω TO-220 The IRF620 is an N-channel Power MOSFET. Its refined layout significantly improves the RDS(on)(on-resistance) figure of merit while maintaining high performance in switching speed, gate charge, and overall ruggedness. Features Extremely high dv/dt capability 100% avalanche tested Minimized gate charge Specifications Parameter IRF620 Unit V DSS (Drain-Source Voltage) 200 V I D (Continuous Drain Current) 6 A R DS(on) (Max) 0.8 Ω Thermal Data Parameter Value (TO-220) Value (TO-220FP) Unit Thermal Resistance Junction-Case (Max) 1.79 4.17 °C/W Thermal Resistance Junction-Ambient (Max) 62.5 – °C/W Max Lead Temperature for Soldering 300 °C Electrical Characteristics (T CASE = 25°C unless noted) Parameter Min. Typ. Max. Unit Test Conditions Gate Threshold Voltage (V GS(th) ) 2 3 4 V V DS = V GS , I D = 250 μA Static Drain-Source On-Resistance (R DS(on) ) – 0.6 1.8 Ω V GS = 10V, I D = 3A Input Capacitance (C iss ) – 350 – pF V DS = 25V, f = 1 MHz, V GS = 0 Output Capacitance (C oss ) – 70 – pF Reverse Transfer Capacitance (C rss ) – 35 – pF Total Gate Charge (Q g ) – 19 – nC V DD = 160V, I D = 6A, V GS = 10V Applications Switching applications DataSheet IRF620