7489 64-Bit 3-STATE Random Access Read/Write Memory 3V–15V 100nW

From the shop's description

7489 64-Bit 3-STATE Random Access Read/Write Memory 3V–15V 100nW The MM74C89 is a high-performance, 16-word by 4-bit random access memory (RAM) . It features four binary address inputs that are internally decoded to select one of the 16 possible word locations . To ensure data stability, an internal address register latches address information on the positive-to-negative transition of the Memory Enable input . A unique characteristic of this device is that it performs a non-destructive read, outputting the complement of the information originally written into the memory . Its 3-STATE data output lines allow for easy memory expansion by connecting multiple units to a common bus . Features Wide Supply Voltage Range Ultra-Low Power Consumption High Speed High Noise Immunity TTL Compatibility 3-STATE Outputs Specifications Absolute Maximum Ratings Parameter Value Supply Voltage (V CC ) 18V Voltage at any Pin -0.3V to V CC + 0.3V Operating Temperature Range -40°C to +85°C Storage Temperature Range -65°C to +150°C Power Dissipation (PDIP) 700 mW DC Electrical Characteristics (V CC = 10V) Symbol Parameter Min Max Units V IN(1) Logical “1” Input Voltage 8.0 – V V IN(0) Logical “0” Input Voltage – 2.0 V V OUT(1) Logical “1” Output Voltage (I O = -10µA) 9.0 – V V OUT(0) Logical “0” Output Voltage (I O = +10µA) – 1.0 V I CC Supply Current (V CC = 15V) – 300 µA AC Electrical Characteristics (V CC = 10V, C L = 50pF) Symbol Parameter Typ Max Units t ACC Access Time from Address Input 130 280 ns t SA Address Setup Time (Min) 60 – ns t HA Address Hold Time (Min) 40 – ns t WE Write Enable Pulse Width (Min) 60 – ns Applications Random Access Memory Memory Expansion Low-Power Systems Package Content 1 x 7489 64-Bit 3-STATE Random Access Read/Write Memory 3V–15V 100nW DataSheet MM74C89