G50N60 IGBT Transistor 600V 50A 250W TO264

G50N60 IGBT Transistor 600V 50A 250W TO264 The G50N60 IGBT Transistor is a high-performance component designed by Fairchild Semiconductor, specifically engineered for high-voltage and high-current applications. As an Insulated Gate Bipolar Transistor (IGBT), it combines the best features of both MOSFET and bipolar transistor technologies, offering efficient switching performance. This IGBT is designed to deliver superior performance with a short-circuit rated structure. It supports applications that require robust performance under challenging conditions such as motor control, uninterruptible power supplies (UPS), and general inverters. It features low conduction losses and high switching speed, ensuring efficient operation. The G50N60’s design offers a balanced combination of high voltage tolerance, ruggedness against short circuits, and excellent thermal management. It achieves a balance between performance and reliability, making it an ideal choice for power management in various industrial systems. Features: 50 A, 600 V rating at 100°C junction temperature. Low saturation voltage (VCE(sat) = 2.2V at IC = 50A). Short-circuit withstand time of 10 µs. High-speed switching capability. High input impedance. Rated for high-speed operation and rugged against short circuits. Specifications: Parameter Value Collector-Emitter Voltage (VCE): 600 V Gate-Emitter Voltage (VGE): ± 20 V Collector Current @ TC = 25°C: 80 A Collector Current @ TC = 100°C: 50 A Pulsed Collector Current (ICM): 150 A Power Dissipation @ TC = 25°C: 250 W Junction Temperature (TJ): -55 to +150°C Storage Temperature Range: -55 to +150°C Gate Charge (Qg): 145 – 210 nC Applications: Motor Control. Uninterruptible Power Supplies (UPS). General Inverters. Package includes: 1x G50N60 IGBT Transistor 600V 50A 250W TO264. Documents: Datasheet.

G50N60 IGBT Transistor 600V 50A 250W (TO-264) The G50N60 IGBT Transistor is a robust, high-efficiency power switching device designed for high-voltage and high-current applications. As an Insulated Gate Bipolar Transistor (IGBT) , it merges the easy gate drive and fast switching characteristics of MOSFETs with the strong current-handling capability of bipolar transistors—making it a reliable choice for demanding power control systems. Built with a short-circuit rated structure , the G50N60 delivers stable performance under harsh operating conditions. It provides low conduction losses and high switching speed , helping improve overall system efficiency and reduce thermal stress in power stages. Its TO-264 package also supports effective heat dissipation, contributing to better reliability and long-term operation. This device is well-suited for industrial power conversion tasks where ruggedness, thermal performance, and switching reliability are critical—such as inverter stages, motor drives, and UPS power modules. Key Features High voltage and current capability: 600V / 50A (at 100°C junction temperature) Low saturation voltage: VCE(sat) ≈ 2.2V at IC = 50A Short-circuit withstand capability: up to 10 µs High-speed switching performance High input impedance for easier gate drive Designed for rugged operation in power control applications Technical Specifications Parameter Value Collector-Emitter Voltage (VCE) 600 V Gate-Emitter Voltage (VGE) ± 20 V Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 50 A Pulsed Collector Current (ICM) 150 A Power Dissipation @ TC = 25°C 250 W Junction Temperature (TJ) -55 to +150°C Storage Temperature -55 to +150°C Gate Charge (Qg) 145 – 210 nC Typical Applications Motor Control & Motor Drives Uninterruptible Power Supplies (UPS) General-purpose Inverters & Power Converters