IRF820 N-Channel MOSFET (500V, 2.5A)

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Specifications Current : Continuous Drain Current @ 10V, TC = 25 °C – 2.5A Continuous Drain Current @ 10V, TC = 100 °C- 1.6A Pulsed Drain Current – 8A Voltage : Drain-Source Voltage – 500V Gate-Source Voltage – ± 20V IRF820 N-Channel MOSFET Datasheet

The IRF820 is a high-voltage N-Channel Power MOSFET with a drain-source voltage of 500V and a continuous drain current of 2.5A. It is well-suited for high-voltage applications such as power converters, SMPS circuits, and audio amplifiers. With its TO-220 package, it offers reliable thermal performance and ease of mounting, making it an excellent choice for both hobbyists and professional engineers.