2SK2129 MOSFET Transistor 800V 3A TO-220E

From the shop's description

2SK2129 800V 3A MOSFET Transistor TO-220F The 2SK2129 is a silicon N-channel power F-MOSFET designed for high-voltage switching applications. It’s built to handle harsh switching conditions (avalanche-capable device) and to be driven directly from typical gate-drive voltages used in power electronics. The device is aimed at circuits where a compact, through-hole package and robust high-voltage blocking are required — for example contactless relays, solenoid/diving circuits, motor drivers, and switching power supplies. Mechanically the device is supplied in a TO-220 style insulated package (datasheet shows TO-220E) which makes it straightforward to mount on small heatsinks or into power assemblies. Thermal design matters for continuous few-amp operation: the part has a modest thermal resistance to case and a maximum channel temperature rating, so you should plan for heat-sinking if you operate near rated power. The transistor is optimized for reasonably fast switching with good ruggedness (no secondary breakdown) for reliable use in inductive loads. Features: High-voltage N-channel power MOSFET. Avalanche-robust construction for safe switching of inductive loads. Wide gate tolerance for robust gate drive handling. Designed for fast switching (low switching losses). Through-hole TO-220 style packaging for easy mounting and heat-sink attachment. Good ruggedness (no secondary breakdown). Specifications: Parameter Symbol Value Unit Conditions / notes Drain–Source breakdown voltage VDSS 800 V Absolute max (TC = 25°C) Gate–Source voltage (allowable) VGSS ±30 V Absolute max Drain current (DC) ID ±3 A Absolute max (TC = 25°C) Drain current (pulsed) IDP ±6 A Pulse rating Avalanche energy capacity EAS 20 mJ Guaranteed per conditions Allowable power dissipation PD 50 W TC = 25°C Thermal resistance (channel-to-case) Rth(ch–c) 2 °C/W Maximum channel/junction temperature Tch / Tj 150 °C Absolute max Storage temperature Tstg −55 to +150 °C Pinout: Pin 1 2 3 Name Gate Drain Source Applications: Contactless/solid-state relays. Solenoid / diving circuits. Motor drive switching stages (small motors). Control equipment and general high-voltage switching. Switching power supplies (high-voltage side). Packages: 1x 2SK2129 MOSFET Transistor 800V 3A TO-220E. Documents: 2SK2129 Datasheet.