K50H603 IGBT Transistor 600V 50A, High Speed TO247

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K50H603 IGBT Transistor 600V 50A, High Speed TO247 The K50H603 marking corresponds to the Infineon IKW50N60H3 high-speed IGBT, a third-generation high-speed switching device using TRENCHSTOP technology with a soft, fast-recovery anti-parallel diode. It is designed for power-control applications where efficient high-frequency switching and controlled switching behavior are important. The device is intended for applications such as uninterruptible power supplies, welding converters, and converters operating at high switching frequencies. It combines a high-voltage IGBT with an integrated anti-parallel diode, making it suitable for power conversion and switching stages that require bidirectional current paths. Features: High-speed switching IGBT. TRENCHSTOP technology. Soft, fast-recovery anti-parallel diode. Low EMI characteristics. Suitable for high-frequency switching. RoHS compliant. Pb-free lead plating. Qualified according to JEDEC for target applications. TO-247 package format. Specifications: Specification Details Part Number IKW50N60H3 Marking K50H603 Device Type IGBT Technology TRENCHSTOP Collector-Emitter Voltage (VCE) 600 V Collector Current (IC) at TC = 25°C 100 A Collector Current (IC) at TC = 100°C 50 A Pulsed Collector Current (ICpuls) 200 A Collector-Emitter Saturation Voltage (VCEsat) 1.85 V typ. at 25°C, 50 A Maximum Junction Temperature 175°C Gate-Emitter Voltage (VGE) ±20 V Short-Circuit Withstand Time 5 µs Power Dissipation at TC = 25°C 333 W IGBT Thermal Resistance, Junction-to-Case 0.45 K/W Package PG-TO247-3 Mounting Type Through Hole Number of Pins 3 Pinout: Pin Function 1 Gate (G) 2 Collector (C) 3 Emitter (E) Applications: Uninterruptible power supplies (UPS). Welding converters. High-frequency converters. Power conversion systems. High-power switching circuits. Inverter and converter stages. Packages Included: 1 × K50H603 IGBT Transistor 600V 50A, High Speed TO247. Documents: K50H603 Datasheet.