MN4164P-15A NMOS 65,536 x 1 Bit Dynamic RAM DIP 16-Pin

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MN4164P-15A NMOS 65,536 x 1 Bit Dynamic RAM DIP 16-Pin The MN4164P-15A is a dynamic random-access memory (DRAM) integrated circuit that provides 65,536 bits of data storage, organized as a single 65,536 x 1 bit array. Built using NMOS technology, it stores each bit of data as an electrical charge in a tiny capacitor within a memory cell. This dynamic storage mechanism requires the data to be periodically refreshed to maintain integrity, a key characteristic of DRAMs that allows for high-density memory structures. This RAM is designed for easy integration into digital systems, operating from a single +5V power supply. It features a multiplexed address bus, where the 16 address bits needed to access any of the 64K locations are supplied over 8 pins, using the Row Address Strobe (RAS) and Column Address Strobe (CAS) signals to latch the row and column addresses respectively. This multiplexing significantly reduces the number of pins required, leading to a compact 16-pin DIP package. The device supports several flexible operating modes controlled by the RAS, CAS, and WRITE pins. These include standard Read and Write cycles, a Read-Modify-Write cycle for atomic operations, and a Page Mode for faster access to multiple bits within the same row. The data output is tri-state, going into a high-impedance state when not active, allowing it to be connected directly to a shared system data bus. Features: 65,536 x 1 Bit Memory Organization. 16-Pin Dual In-line Package (DIP). Single +5V ±10% Power Supply. Direct TTL Compatibility for All Inputs and Outputs. On-Chip Address and Data Registers. Multiplexed 8-Bit Address Input Bus. RAS-Only Refresh (128 cycles per 2ms). Page Mode Operation. Read, Write, and Read-Modify-Write Cycles. Common I/O Capability Using Tri-State Output. Specifications: Parameter Specification Organization: 65,536 x 1 bit Technology: NMOS Dynamic RAM (DRAM) Supply Voltage: +5V ±10% Operating Current (Active): 50 mA (max) Standby Current: 5 mA (max) RAS Access Time: 150 ns (max) Cycle Time: 270 ns (max) Package: 16-pin DIP Refresh: 128 cycles every 2 ms Pinout Diagram: Applications: Personal Computers (PCs). Computer Main Memory. Graphics and Video Memory. Industrial Control Systems. Data Buffering. Package Contents: 1x MN4164P-15A NMOS 65,536 x 1 Bit Dynamic RAM DIP 16-Pin Datasheet